“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] With advances in the materials technology, highquality semiconductor nanowire have been obtained through, for instance, molecular-beam epitaxy, [18][19][20] metal-organic vapor phase epitaxy, [21][22][23] and chemical vapor deposition. [24][25][26][27][28][29] Due to their well organized crystal structures, relatively high carrier mobilities, small cross sections, and strong quantum confinement effects, III-V semiconductor nanowires have been employed to construct field-effect transistors, [30][31][32][33] infrared photodetectors, 34,35 light emission diodes, 36,37 thermal electrical devices, 38,39 laser devices, 40,41 solar cells, [42][43][44][45] and quantum devices. [11]…”