InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

Kim, Ho Sung; Ahn, Seung Yeop; Kim, Sang Hyeon; Ryu, Geun Hwan; Kyhm, Jihoon; Lee, Kyung Woon; Park, Jung Ho; Choi, Won Jun

doi:10.1364/oe.25.017562

Cited by 26 publications

(9 citation statements)

References 18 publications

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“…7(b) is J-V characteristics of the as-grown QDIP and B-QDIP of sample C. The J in forward bias region of the as-grown QDIP shows almost identical current with that in reverse bias region of B-QDIP and the same trend in the other regions, showing the decalcomania characteristics of two QDIPs. The identical dark current level suggests that the material characteristics of QDs and epitaxial layers were not changed after MWB and ELO, which is also previously described in our literature [18]. Fig.…”

Section: Resultssupporting

confidence: 87%

“…In our previous study, QDIPs on a Si substrate were fabricated successfully by means of MWB and ELO technologies [18]. According to our studies, B-QDIP showed the change of photoluminescence (PL) characteristics as well as the change of the spectral response of the device.…”

Section: Introductionmentioning

confidence: 93%

“…In the ELO step, the AlAs layer was selectively etched away by dipping the HF and aceton one to one solution and the GaAs wafer was lifted-off. The detailed growth and fabrication processes are described in reference [18]. Finally, the device was completed, followed by mesa etching and metallization.…”

Section: Device Fabricationmentioning

confidence: 99%

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Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

et al. 2019

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In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs having a different cavity length of 1.7, 2.8, 3, and 3.4 μm were fabricated and compared with simulation based on the finite-difference time-domain method. The resonance peaks were observed in both photocurrent spectrum and absorption spectrum due to the microcavity formed by the bottom mirror of Pt/Au layer and the flat GaAs/air interface. The peak wavelength of the photocurrent spectrum in all four QDIPs on Si samples shows a good agreement with the simulated absorption spectrum. The bias-dependent photocurrent was also measured to study the microcavity effects more in depth. The ratio of the increased photocurrent under bias condition shows higher value in the microcavity QDIPs, showing that the microcavity contributes to generate photocurrent effectively. From these results, we believe that the MWB and ELO could be useful to make the microcavity in many integrated chemical and biosensing application.

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Section: Resultssupporting

confidence: 87%

Section: Introductionmentioning

confidence: 93%

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Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

et al. 2019

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“…114 III−V semiconductors exhibit much higher efficiency and performance at infrared wavelengths. 114,115 Figure 3i shows the device structure schematic for a fiber-to-the-home transceiver array made by transferring premade III−V O-band photodetectors onto silicon photonic wafers. 116 With such a structure, a 10 Gbit/s transceiver array was demonstrated.…”

Section: Transistorsmentioning

confidence: 99%

Freestanding Membranes for Unique Functionality in Electronics

Han

Meng

et al. 2023

ACS Appl. Electron. Mater.

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Epitaxy of single-crystalline materials laid the foundation for numerous electronics as a core technology. Nevertheless, because the single-crystalline epilayers are covalently bonded to substrates, only limited applications were explored. The recent development of layer transfer techniques has suggested another way involving the production of freestanding membranes that are free from substrates. In this review, we comprehensively catalog recent advances for freestanding-membrane-based electronics from transistors and memory storage to sensors and energy harvesters. We highlight their unique advantages, including flexibility, unique physical coupling, heterointegrability, and costeffectiveness, and summarize their challenges and perspectives.

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“…Besides fundamental research, the monolithic integration of infrared photodetectors on silicon substrates [8,9] have also received wide attention from the application-oriented communities, due to the following advantages. First, larger area of III-V substrates (such as GaAs, GaSb and InP) are currently under development.…”

Section: Introductionmentioning

confidence: 99%

Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate

Huang

Guo

Chen

et al. 2018

J. Lightwave Technol.

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Mid-infrared photodetector based on sub-monolayer (SML) quantum dot quantum cascade structure monolithically grown on silicon substrate has been demonstrated in this work. Both the optical and electrical characteristics of the SML quantum dot quantum cascade photodetectors (QD-QCD) were analyzed quantitatively. The performances of these devices were compared with that on native GaAs substrate. A large resistance-area (R0A) product of 1.13×10 7 Ω.cm 2 is achieved at 77 K for the silicon based devices, which is only roughly one order less than that on GaAs substrate. The device shows a normal-incident peak responsivity of 0.59 mA/W under zero bias at the wavelength of 6.2 μm at 77 K, indicating a photovoltaic operation mode. Johnson noise limited specific detectivity is 3×10 10 cm•Hz 1/2 /W at 77 K, with photoresponse up to 100 K. These results suggest that the silicon-based QD-QCD in this work is a very promising candidate for large format mid-infrared focal plane array and mid-infrared silicon photonics applications.

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InAs/GaAs quantum dot infrared photodetector on a Si substrate by means of metal wafer bonding and epitaxial lift-off

Cited by 26 publications

References 18 publications

Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

Freestanding Membranes for Unique Functionality in Electronics

Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate

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