InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Thomassen, Sedsel Fretheim; Reenaas, Turid Worren; Fimland, B. O.

doi:10.1016/j.jcrysgro.2010.12.082

Cited by 3 publications

(1 citation statement)

References 12 publications

(24 reference statements)

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“…As to realization of disorder, Eq. ( 4), we can speculate that the necessary density variations can be provided in gaseous atomic setups with the optical trapping technique [34], while in solid-state systems the concentration variation of active particles (e.g., quantum dots) can result from the proper variations of synthesis conditions, such as temperature [35]. On the other hand, one can expect that further theoretical studies will significantly lower requirements for the experimental samples to observe the effects of disorder.…”

Section: Main Equations and Parametersmentioning

confidence: 99%

Disordered resonant media: Self-induced transparency versus light localization

Novitsky

2018

Phys. Rev. A

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We propose a concept of disordered resonant media, which are characterized by random variations of their parameters along the light propagation direction. In particular, a simple model of disorder considered in the paper implies random change of the density of active particles (two-level atoms). Within this model, the effect of disorder on self-induced transparency (SIT) is analyzed using numerical simulations of light pulse propagation through the medium. The transition from the SIT to localization regime is revealed as well as its dependence on the disorder level, atom density, medium thickness, and period of random variations.

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Section: Main Equations and Parametersmentioning

confidence: 99%

Disordered resonant media: Self-induced transparency versus light localization

Novitsky

2018

Phys. Rev. A

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Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

Ilahi

Nasr

Paquette³

et al. 2016

Journal of Alloys and Compounds

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a b s t r a c tThis paper reports on experimental and theoretical investigation of atyical temperature-dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The impact of a post-growth intermixing process on these properties has been studied. For the as-grown sample, the maximum of the emission band follows a sigmoidal function while the photoluminescence linewidth mimics a V-shape function as the temperature increases, from 11 to 300 K. These behaviors are attributed to thermally activated carrier transfer mechanisms within the inhomogenious distribution of quantum dots. These atypical behaviors are found to disappear progressively with the degree of intermixing and consequent narrowing of the dot size dispersion. The experimental results have been interpreted in the frame of the localized states ensemble model revealing that the large dots size distribution is the main origin of the observed anomalies. Furthermore, the calculations show that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers.

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Electronic states and the resonant optical non-linearity of exciton in a narrow band InSb quantum dot

Narayanan¹,

Peter

2012

Physica B: Condensed Matter

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InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Cited by 3 publications

References 12 publications

Disordered resonant media: Self-induced transparency versus light localization

Disordered resonant media: Self-induced transparency versus light localization

Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

Electronic states and the resonant optical non-linearity of exciton in a narrow band InSb quantum dot

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