In0.49Ga0.15P/In0.15Ga0.85As heterostructure pulsed doped-channel FETs

Chan, Y. J.; Yeh, Tzu-Jin; Kuo, J. M.

doi:10.1049/el:19940721

Cited by 14 publications

(8 citation statements)

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“…5,6,[26][27][28][29][30] HEMTs have high carrier mobility, but are limited in sheet carrier concentration. DCFETs exhibit enhanced carrier concentration at the expense of lower carrier mobility.…”

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confidence: 99%

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Lin

2011

J. Electrochem. Soc.

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This investigation reports on the first symmetrically double-delta-doped channel InAlAs/InGaAs/GaAs metamorphic field-effect transistor ͑MFET͒. Two types of devices are fabricated as follows. In the fabrication of the first, the gate recessing steps are carried out using nonselective etching solution ͑phosphoric acid/hydrogen peroxide mixtures͒. In the fabrication of the second, a pH 5.5 selective succinic acid:ammonia hydrogen peroxide:water wet chemical etching liquid is adopted to form the gate recess. A succinic acid-based solution is found to be a better selective etchant of an InGaAs/InAlAs system than the more commonly used phosphoric acid-based solutions, in terms of the etching selectivity and the smoothness of the etched surface. The etch-stop mechanism is inferred from Auger electron spectroscopy to involve the formation of nonvolatile aluminum oxide, in strong agreement with the X-ray photoelectron spectroscopy spectra. Nearly kink-free current-voltage characteristics are achieved. The assessment of these structures for application in power field-effect transistor devices reveals that high frequency, high transconductance devices are feasible. As far as the authors are aware, this study is the first to compare MFETs that use a nonselective wet gate recess with those that use a selective wet gate recess.The speedily widening market for wireless communication devices in the past has increased the need for GaAs-based epitaxial materials. 1-3 Field-effect transistors ͑FETs͒ are important in today's high frequency communication systems. 4 The development of high electron mobility transistors ͑HEMTs͒ in the late 1970s in the AlGaAs/GaAs materials system gave device designers the opportunity to exploit the high mobility of undoped GaAs to improve fieldeffect transistor performance. The primary motivation for the use of the AlGaAs/GaAs system is that AlGaAs is lattice-matched to GaAs over the entire compositional range. 5,6 The GaAs/InGaAs pseudomorphic high electron mobility transistor ͑PHEMT͒ has attracted interest as an alternative to the AlGaAs/GaAs HEMTs because it exhibits excellent carrier confinement and a depressed deep-level concentration in the material with the higher bandgap, which results in persistent photoconductivity at cryogenic temperatures. 7 Most importantly, InGaAs layers on GaAs substrates have been popular for use in PHEMTs because they have favorable transport over GaAs, substrates of which are relatively cost-effective. To grow pseudomorphic strained layers, the critical thickness at which the strain in a lattice mismatched layer relaxes through the generation of misfit dislocation must be known. 8,9 An improvement over the GaAs/InGaAs PHEMT is the AlGaAs/InGaAs PHEMT with a small AlAs mole fraction, 10-12 which has a larger conduction-band discontinuity than the GaAs/InGaAs PHEMT, supporting a greater carrier concentration without experiencing the effects related to a large mole fraction of AlGaAs. Although excellent performance has been achieved by growing pseudomorphic strained ch...

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confidence: 99%

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Lin

2011

J. Electrochem. Soc.

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“…So, the transconductance linearity can be improved [13]. This broad operation regime of is remarkably better than the previously reported devices [2], [7], [14]. The measured output current densities at and 2.5 V are 389 (461) and 826 (990) mA/mm at room temperature (77 K), respectively.…”

Section: Resultsmentioning

confidence: 74%

“…1 shows the cross section and corresponding conduction-band diagram of the studied device. It is clear that the bandgap of In Ga P Schottky layer ( 1.92 eV) and the conduction-band discontinuity ( ) at the In Ga P/In Ga As heterointerface ( 0.275 eV) can effectively confine electrons in the InGaAs channel [7], [12]. Furthermore, the presented valance-band discontinuity ( ) of 0.377 eV can prevent holes, generated by impact ionization, reaching the gate contact [9], [10].…”

Section: Methodsmentioning

confidence: 99%

“…In contrast, few researches are based on InGaP/InGaAs material system, which also demonstrates successful applications in microwave power systems, have been reported. There are several advantages by using InGaP/InGaAs material system in device fabrication as compared with AlGaAs/InGaAs or InAlAs/InGaAs ones [7]- [11]. These advantages include the elimination of DX centers, low reactivity of thermal oxidation, and high etching selectivity between InGaP and InGaAs materials, etc.…”

Section: Introductionmentioning

confidence: 99%

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High-performance InGaP/In_xGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure

Liu

Chang

Lour

et al. 1999

IEEE Electron Device Lett.

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This letter reports a new and high-performance InGaP/In x x x Ga 1 0 0 0x x x As high electron mobility transistors (HEMT's) with an inverted delta-doped V-shaped channel. Due to the presence of V-shaped inverted delta-doped InGaP/In x x x Ga 1 0 0 0x x x As structure, the good carrier confinement and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1 2 2 2 100 m 2 ) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at V V V GS GS GS = = = 2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm at 300 K. Meanwhile, the studied device exhibits a good microwave frequency linearity.Index Terms-Breakdown voltage, carrier confinement, HEMT, inverted delta-doped V-shaped channel.

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“…As shown in figure 8, the current gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) for the studied CAMFET are 17 and 31 GHz, respectively under the bias conditions of V DS = 7 V, and V GS = 0 V. These values are higher than those of the other HFETs with 1.0 µm gate length [12,13]. Moreover, the measured f T is in good agreement with the calculated values as mentioned above.…”

Section: Resultsmentioning

confidence: 83%

Nikolai Nikolaevich Chentsov (obituary)

Arnold¹,

Bakhvalov²,

Brushlinskii³

et al. 1993

Russ. Math. Surv.

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A newly designed n + -GaAs/δ(p + )-GaInP/n-GaAs camel-type field-effect transistor (CAMFET) with a triple-step doped channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V and breakdown voltage of 40 V and the very low gate leakage current of 400 µA mm −1 are obtained for the studied CAMFET. In addition, good transistor properties are obtained. The measured current gain cut-off frequency f T and the maximum oscillation frequency f max for a 1 µm gate device are 17 and 31 GHz, respectively. Based on experimental results, the studied device shows promise for circuit applications.

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In0.49Ga0.15P/In0.15Ga0.85As heterostructure pulsed doped-channel FETs

Cited by 14 publications

References 2 publications

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

High-performance InGaP/In_xGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure

Nikolai Nikolaevich Chentsov (obituary)

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In0.49Ga0.15P/In0.15Ga0.85As heterostructure pulsed doped-channel FETs

Cited by 14 publications

References 2 publications

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels

High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure

Nikolai Nikolaevich Chentsov (obituary)

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High-performance InGaP/In_xGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure