In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution

McDonnell, Stephen; Zhernokletov, D. M.; Kirk, Alexander P.; Kim, J.; Wallace, Robert M.

doi:10.1016/j.apsusc.2011.05.034

Cited by 52 publications

(33 citation statements)

References 24 publications

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“…Ga 2 O 3 and Sb-Sb surface defects are believed to be responsible for high D it within the GaSb bandgap (21) and should be minimized to avoid Fermi level pinning. To address this problem, a thin InAs surface layer was grown on GaSb and treated with (NH 4 ) 2 S to remove native oxides and passivate dangling bonds.…”

Section: Ex-situ Gate Process With Inas On Gasbmentioning

confidence: 99%

(Invited) InGaSb MOSFET Channel on Metamorphic Buffer: Materials, Interfaces and Process Options

et al. 2013

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High quality bulk GaSb and InGaSb quantum wells grown on GaAs substrates were MBE grown using a AlGaSb(As) metamorphic buffer layers to reduce dislocation density down to 10 7 cm -2 . Strained In 0.36 Ga 0.64 Sb quantum wells with a biaxial compressive strain of 1.8% showed the highest mobility of 1020 cm 2 /Vs and a low sheet resistance of 3.9 kΩ/sq. at hole sheet at hole density of 1.9x10 12 cm -2 . Buried channel design with an AlGaSb top barrier improved hole mobility by only 30% compared to surface QW channels. Improving the interface trap density down to 10 12 cm -2 eV -1 was realized using an amorphous Si layer (in-situ gate oxide) or an InAs layer (ex-situ gate) as a gate passivation. p ++ -GaSb epitaxial contact layers were developed and showed the leakage current of ~0.1 mA/cm 2 not affected by growth defects. Critical elements of "gate-last" InGaSb MOSFET fabrication process were developed utilizing an InAs etch stop layer to avoid high temperature processing of the gate stack.

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Section: Ex-situ Gate Process With Inas On Gasbmentioning

confidence: 99%

(Invited) InGaSb MOSFET Channel on Metamorphic Buffer: Materials, Interfaces and Process Options

et al. 2013

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“…Antimonide based compound semiconductors have attracted extensive attentions due to their superior hole mobilities for next generation CMOS integration [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Source/drain ohmic contact optimization for GaSb pMOSFETs

Sun

Chang

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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In this paper, source/drain ohmic contact for GaSb pMOSFETs has been extensively studied and optimized.Different concentrations of HCl-based solutions are used to clean the non-self limiting and non-stable native oxide layer of GaSb surface before source/drain ohmic contact metal deposition. Ni/Pt/Au, Ti/Pt/Au, Ni/Au, and Pt/Ti/-Pt/Au contacts to p-type GaSb are investigated. The Ni/Pt/Au ohmic contact shows an optimal specific contact resistance of about 6.89×10 -7 Ω·cm 2 with 1 min RTA at 250 • C after the contact metal deposition.

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“…As the thermal desorption temperatures of these oxides generally exceed 450 C, 13 wet etches are often employed to achieve a nearly oxide-free surface prior to ALD. Aqueous oxide removal treatments reported in conjunction with ALD on GaSb include: HCl, 7-12,14 (NH 4 ) 2 S, 14,15 NH 4 OH, 11,15 and HF. 11 Of these, HCl-based approaches have been the most effective at removing the native oxide and unpinning the semiconductor Fermi-level in fabricated devices.…”

mentioning

confidence: 99%

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Ruppalt

Cleveland

Champlain

et al. 2012

Applied Physics Letters

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In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage measurements, were obtained using higher plasma powers, longer exposure times, and increasing substrate temperatures up to 250 °C. X-ray photoelectron spectroscopy reveals that the most effective treatments result in decreased SbOx, decreased Sb, and increased GaOx content at the interface. This in situ hydrogen plasma surface preparation improves the semiconductor/insulator electrical interface without the use of wet chemical pretreatments and is a promising approach for enhancing the performance of Sb-based devices.

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In situ X-ray photoelectron spectroscopy characterization of Al2O3/GaSb interface evolution

Cited by 52 publications

References 24 publications

(Invited) InGaSb MOSFET Channel on Metamorphic Buffer: Materials, Interfaces and Process Options

(Invited) InGaSb MOSFET Channel on Metamorphic Buffer: Materials, Interfaces and Process Options

Source/drain ohmic contact optimization for GaSb pMOSFETs

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

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