In-situ  TEM observation of Multilevel Storage Behavior in low power FeRAM device

Chiu, C. H.; Huang, Chun Wei; Hsieh, Yu Chi; Chen, Jui-Yuan; Chang, Chia‐Fu; Chu, Ying‐Hao; Wu, Wen‐Wei

doi:10.1016/j.nanoen.2017.02.008

Cited by 36 publications

(20 citation statements)

References 29 publications

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“…In recent years, with the continuous development of non-volatile random access memory (NVRAMNon-Volatile RAM) and its technology, various NVRAMs have emerged. Ferroelectric RAM (also known as FeRAM or FRAM) uses a layer of ferroelectric material to replace the original dielectric, making it also have the function of non-volatile memory [52]. Ferroelectric memory can be traced back to 1952.…”

Section: The Development Of Internal Memorymentioning

confidence: 99%

Review of Research on Storage Development

Zhang

2021

SCPE

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The development of computer external storage has undergone the continuous change of perforated cassettes, tapes, floppy disks, hard disks, optical disks and flash disks. Internal memory has gone through the development of drum storage, Williams tube, mercury delay line, and magnetic core storage, until the emergence of semiconductor memory. Later RAM and ROM were born. RAM was divided into DRAM and SRAM. Due to its structure and cost advantages, DRAM has gradually developed into the widely used DDR series. At the same time, the low-power LPDDR series has also been advancing. At present, with the development of NVRAM technology, non-volatile random access memory with both internal and external storage functions is born. Dual-space storage based on NVRAM combines internal and external storage into one, and large capacity dual-space storage has become the development trend of storage.

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Section: The Development Of Internal Memorymentioning

confidence: 99%

Review of Research on Storage Development

Zhang

2021

SCPE

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“…The big data era is a great challenge to current data storage technologies. [ 1,2 ] To improve memory capacity, the memristor is one of the most promising candidates for future nonvolatile memory (NVM) technologies. [ 3 ] Memristors show remarkable advantages in terms of area compaction (4F 2 , the F is the minimum technology feature size), fast write–read speeds, low energy consumption, and compatibility with the complementary metal‐oxide–semiconductor (CMOS) process.…”

Section: Introductionmentioning

confidence: 99%

Electrocatalytic Hydrolysis‐Modulated Multistate Resistive Switching Behaviors in Memristors

Guo

Sun

Ranjan

et al. 2021

Physica Status Solidi (a)

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Current rapid development of big data, Internet of Things, and artificial intelligence require exponentially higher data storage capacity. The memristor technology, which stores data by controlling resistance states, demonstrates great prospects in resistive random-access memory (RRAM), synapse construction, and neuromorphic computing. However, traditional memristor devices can only store 1-bit of data by tuning two separate resistance states, which limits their storage density. Herein, a water-coupled Ag/TiO 2 _few-layer graphene_TiO 2 /Al memristor is developed as a multibit data storage system. The high and low resistance state ratio (HRS/LRS) increases from 5 to 44 when water is coupled in the device. An electrocatalytic hydrolysis-modulated resistive switching mechanism is proposed for the physical phenomenon. Herein, not only a multilevel per cell (MLC) storage device is developed, but also a novel electrocatalysis coupling mechanism for memristor technology is provided.

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“…Make allowances for a large number of researches about resistive switching and memory effects [29][30][31][32], the influence of adsorbed level on the resistive switching behavior, which seems that further research is needed. It is reasonable to expect that adsorbed level will have a noticeable impact on charge transport processes, and consequently will have significant influence on device property [33].…”

Section: Introductionmentioning

confidence: 99%

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

Sun

Shi

2021

J Mater Sci: Mater Electron

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Co-Al layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs Film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

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In-situ TEM observation of Multilevel Storage Behavior in low power FeRAM device

Cited by 36 publications

References 29 publications

Review of Research on Storage Development

Review of Research on Storage Development

Electrocatalytic Hydrolysis‐Modulated Multistate Resistive Switching Behaviors in Memristors

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

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