In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates

Raghavan, Srinivasan; Redwing, Joan M.

doi:10.1016/j.jcrysgro.2003.11.020

Cited by 43 publications

(45 citation statements)

References 18 publications

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“…However, as has been documented elsewhere, [16][17][18][19][20] only a constant tensile stress is observed right from the beginning of AlN growth on Si. This is particularly true of low mobility films grown at relatively high rates in excess of 1 nm/sec as is typical of MOCVD.…”

Section: Which Showsmentioning

confidence: 56%

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Chandrasekar

Mohan

Bardhan

et al. 2013

Applied Physics Letters

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The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus >1 GPa) and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface and crystal quality.

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Section: Which Showsmentioning

confidence: 56%

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Chandrasekar

Mohan

Bardhan

et al. 2013

Applied Physics Letters

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“…This tensile stress has been attributed to the combination of lattice mismatch stress and AlN island coalescence induced stress. 11 The thin GaN and Al 0.25 Ga 0.75 N layers of the multilayer buffers both grow under a compressive stress as a result of their larger lattice parameter compared to AlN. The growth stress of each compositionally graded Al x Ga 1-x N buffer layer is initially tensile and gradually transitions to compressive.…”

Section: Stress Evolution and Film Crackingmentioning

confidence: 99%

Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition

Weng

Acord

Jain

et al. 2007

Journal of Elec Materi

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“…The influence of the growth parameters including growth temperature, 14 V/III ratio, 15 and thickness 16 has been studied in terms of the crystalline quality of the top GaN layers, but there are a few reports on the optimization of AlN/Si(111) templates relating the crystalline quality, surface morphology, and stress in the epitaxial AlN layers. 17 In this work, we will first discuss the growth of the AlN template. We have investigated the changes in morphologies as a function of AlN layer thickness.…”

Section: Introductionmentioning

confidence: 99%

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Cheng

Leys

Degroote

et al. 2006

J. Electron. Mater.

126

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In this work, we report on the growth by metalorganic vapor phase epitaxy (MOVPE) of GaN layers on AlN/Si(111) templates with step-graded AlGaN intermediate layers. First, we will discuss the optimization of the AlN/Si(111) templates and then we will discuss the incorporation of step-graded AlGaN intermediate layers. It is found that the growth stress in GaN on high-temperature (HT) AlN/Si(111) templates is compressive, although, due to relaxation, the stress we have measured is much lower than the theoretical value. In order to prevent the stress relaxation, step-graded AlGaN layers are introduced and a crack-free GaN epitaxial layer of thickness .1 mm is demonstrated. Under optimized growth conditions, the total layer stack, exceeding 2 mm in total, is kept under compressive stress, and the radius of the convex wafer bowing is as large as 119 m. The crystalline quality of the GaN layers is examined by highresolution x-ray diffraction (HR-XRD), and the full-width-at-half maximums (FWHMs) of the x-ray rocking curve (0002) v-scan and (ÿ1015) v-scan are 790 arc sec and 730 arc sec, respectively. It is found by cross-sectional transmission electron microscopy (TEM) that the step-graded AlGaN layers terminate or bend the dislocations at the interfaces.

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In situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates

Cited by 43 publications

References 18 publications

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si

Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

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