In-situ Rapid Isiheial Pocessing of Thin Epitaxial Dieleciric Films on Silicon and Compound Semi Semiconductors

Abstract

AbstracrWe have developed a new rapid isothermal processing technique for the deposition of epitaxial dielectric films (II–VIa fluorides and their mixtures) on silicon and ccmpound semiconductors. In this process, epitaxial dielectric films are deposited in an e-beam system at room teqperature and subsequently subjected to in-situ rapid isothermal annealing by using incoherent light sources incorporated in the e-beam system. Epitaxial dielectric films of CaF2 and CaxS1−xF2 have been deposited on Si, GaAs and InP. In this paper, prelimilifty results of electrical and structural characteristics of. epitaxial dielectric films on Si and cupourd semiconductors are presented.