To date thin films of II(a) fluorides (CaF2, BaF2, SrF2, and their mixtures) have only been deposited by physical vapor deposition techniques. We report for the first time the deposition of BaF2 films on silicon and yttrium-stabilized zirconia substrates by metalorganic chemical vapor deposition at a substrate temperature as low as 400 °C.
A Lead salt midinfrared quantum-well (QW) laser on [110] orientation is proposed. Theoretical simulations of [110] QW edge-emitting lasers show a 70° temperature increase in continuous-wave operation compared to the conventional [100]-orientated lasers. This is because the gain on [100]-orientated QW structure is significantly increased. Among [100], [111], and [110] orientations, [110]-orientated QW structure offers the highest gain. PbSe∕PbSrSe QW structures were successfully grown on [110]-orientated BaF2 substrate by molecular-beam-epitaxy (MBE). Photoluminescence intensity of [110]-orientated samples was twice as high as that on [111]-orientated BaF2 substrates from the same MBE run.
A parametric approach has been used to derive an approximate formula for the prediction of the radius of curvature of a thin bimetallic strip that at initial ambient temperature, is both flat and straight, but at above ambient temperature, forms into an arc of a circle. The formula enables the evaluation of the radius of curvature of the strip as a function of heating or cooling. A formula for calculating the radius of curvature of a bimetallic strip already exists, and was produced by Timoshenko in his paper on Bimetallic Thermostats. The formula by Timoshenko has been vigorously tested, tried and proven and accepted in countless papers and journals since its original publication. The parametric approach solution introduced in this work gives an approximate solution to the Timoshenko formula for equal thicknesses of two mating metals within the bimetallic. The Khatkhate Singh Mirchandani (KSM) formula presented here is taken from the first order approximation derived by Angel and Haritos by incorporating the ratio of Young's modulus of the bimetallic materials. Furthermore, researchers in this area have proven that the Young's modulus does not have a significant effect on the radius of curvature. Taking this fact into consideration, the authors have suitably incorporated a correction modifier purely based on the coefficient of thermal expansion (CTE) of the materials. The simulation results and the overall close agreement with the Timoshenko formula has been put forward here. Also, the solution derived by the authors Khatkhate et.al shows better prediction as compared to the solutions derived by other researchers.
Erratum: "Optical properties of nearly stacking-fault-free m -plane GaN homoepitaxial films grown by metal organic vapor phase epitaxy on low defect density free-standing GaN substrates" [Appl. Phys. Lett.92, 091912 (2008)] Appl.
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