In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process

Kim, Dong Hyun; Hong, Won Eui; Ro, Jae-Sang; Lee, Seong Hyuk; Lee, Chang Hoon; Park, Seung Ho

doi:10.1016/j.tsf.2011.03.053

Cited by 19 publications

(9 citation statements)

References 24 publications

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“…High-energy electron beams used in TEM can also cause Joule-heating, which in turn causes disruption of carbon nanotube structure, 24 reduction in graphene oxide 25 and dielectric breakdown in TiO 2 films due to amorphous to crystalline transition. 26 Electron beam-induced crystallization of amorphous Ge 2 Sb 2 Te 5 , 27 local phase transformation of single-layer MoTe 2 , 23 and amorphous to the crystalline transition of Si due to Joule-heating 28 were also reported. Although induced crystallization in Si due to exposure to high-energy electron beams may be desired to lower thermal budgeting, 29 the same can be detrimental to the dielectric layer present.…”

Section: Resultsmentioning

confidence: 95%

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Saha

Phakatkar

Jursich

et al. 2023

Surface & Interface Analysis

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Recent developments in inherently selective atomic layer deposition (ISALD) resulted in the deposition of amorphous ZrO2 thin film on Si with a high growth rate (2 Å/cycle). The deposited film with a high dielectric constant via ISALD may be used in semiconductor processing. However, the amorphous nature of the film and the ZrO2–SiO2/Si interface must be assessed to ensure the prevention of leakage current. There is little information available in the literature regarding the ZrO2–SiO2/Si interface of atomic layer deposition (ALD) ZrO2 film. In this study, high‐resolution transmission electron microscopy was extensively used to determine whether the film and the interface were crystalline or amorphous. It was interesting to find that a high‐energy electron beam can induce crystallinity in the amorphous as‐deposited ZrO2 film within minutes of exposure. Moreover, outward diffusion of the nucleated tetragonal ZrO2 away from the interface was also observed.

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Section: Resultsmentioning

confidence: 95%

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Saha

Phakatkar

Jursich

et al. 2023

Surface & Interface Analysis

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“…3a and the detailed optical models were described in our previous work. 34 The spectral reflectances were depicted in Fig. 3b but the transmittances of the specimen in the wavelength range of 300-900 nm were measured to be approximately zero.…”

Section: Thermal Modelsmentioning

confidence: 99%

Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Kim

Kim²,

Kim

et al. 2017

ECS J. Solid State Sci. Technol.

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Amorphous nitrogenated indium-gallium-zinc oxide (a-IGZO:N) thin films were deposited on highly doped silicon (n+Si) wafer substrates and heat-treated by millisecond flash lamp annealing (FLA) at different preheating temperatures to enhance the electrical characteristics of oxynitride thin film transistors (TFTs). A one-dimensional conduction/radiation heat transfer simulation was conducted to predict the temperature fields in the Si substrate, which indicated that the film temperatures during FLA instantaneously rose above 700 • C. The electrical characteristics of the a-IGZO:N TFTs were compared with those produced by conventional furnace annealing of one hour. As a result of the FLA process, a remarkable improvement in the TFT device performance was observed in terms of the electrical output characteristics and transfer curves of the a-IGZO:N TFTs. Morphological analyses were conducted using X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy, indicating the possibility of partial crystallization of the a-IGZO:N channel layers under high-temperature annealing conditions, but the best TFT performance was found for the amorphous phase of IGZO:N.

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“…하지만 대면적 생산을 위 해서는 상당히 큰 전원을 필요로 한다. (4) 알루미늄 유도 결정화 방법은 위의 방법들과 다 르게 결정화 온도를 알루미늄과 실리콘의 공융점 인 577 ℃ 이하로 낮출 수 있는 방법이며, 일반적 으로 가열로에서 500 ℃, 30 분 ~ 1 시간 동안 열처 리를 진행한다. (5) 이러한 결정화 온도가 떨어지는 이유는 비정질 실리콘과 알루미늄이 접촉하게 되 면, 알루미늄이 실리콘의 강한 공유 결합을 약화 시키기 때문이다.…”

Section: 동안 인가하여 비정질 실리콘을 녹는점 근처인unclassified

Direct-Aluminum-Heating-Induced Crystallization of Amorphous Silicon Thin Film

Park¹,

Lee²,

Moon³

2012

Transactions of the Korean Society of Mechanical Engineers B

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In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of 1 cm × 1 cm can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 cm-1 , which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of 10 21 cm-3. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.

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In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process

Cited by 19 publications

References 24 publications

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Direct-Aluminum-Heating-Induced Crystallization of Amorphous Silicon Thin Film

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In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process

Cited by 19 publications

References 24 publications

The interface of atomic layer deposited ZrO2 on Si/SiO2 from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

The interface of atomic layer deposited ZrO2 on Si/SiO2 from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Direct-Aluminum-Heating-Induced Crystallization of Amorphous Silicon Thin Film

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The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study

The interface of atomic layer deposited ZrO₂ on Si/SiO₂ from an alkoxide zirconium precursor and ethanol: A transmission electron microscopy‐focused study