In this work, the in-situ properties of silver nanoparticle ink were estimated during laser sintering process. The silver nanoparticle ink was composed of 34 wt% silver nanoparticles with an average size of approximately 50 nm, and was deposited on a glass substrate via inkjet printing technology. A 532 nm continuous-wave laser was irradiated to the printed ink for 60 s under various laser intensities. During the laser irradiation, the in-situ electrical conductance of the sintered ink was measured to obtain the transient thermal conductivity of the silver nanoparticle ink using the Wiedemann Franz law. The 2-dimensional, transient heat-conduction equation was calculated to obtain the transient temperature of the silver nanoparticle ink. By coupling the calculated temperature with the measured, transient electrical conductance, the transient thermal conductivity of the ink during the laser sintering process was derived in the calculation. The calculated thermal conductivity of the ink sintered at a laser intensity of 467.9 W/cm2 with 598 K is 355.5 W/mK, which is 86.4% of the thermal conductivity of bulk silver, 411.4 W/mK, at that tempearture. The difference resulting from the porosity of the sintered ink has an effect on the thermal conductivity of the sintered ink.
In this research, a novel direct-aluminum-heating-induced crystallization method was developed for the purpose of application to solar cells. By applying a constant current of 3 A to an aluminum thin film, a 200-nm-thick amorphous silicon (a-Si) thin film with a size of 1 cm × 1 cm can be crystallized into a polycrystalline silicon (poly-Si) thin film within a few tens of seconds. The Raman spectrum analysis shows a peak of 520 cm-1 , which verifies the presence of poly-Si. After removing the aluminum layer, the poly-Si thin film was found to be porous. SIMS analysis showed that the porous poly-Si thin film was heavily p-doped with a doping concentration of 10 21 cm-3. Thermal imaging shows that the crystallization from a-Si to poly-Si occurred at a temperature of around 820 K.
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