In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon

Thermal stability of AlCoCrCuFeNi high entropy alloy thin films studied by in-situ XRD analysis

“…Above this temperature, the FCC (111) peak of the HEA disappears, and new peaks are visible on the spectra. The one at 2θ = 45.4°, which grows in intensity from 710°C to 810°C, can be attributed to Cu 3 Si (312) [11] or NiSi (211) [12] or SiO 2 (111) reflections. Surprisingly no other peaks expected for these phases are detected.…”

Structural and electrical characterization of the nickel silicide films formed at 850°C by rapid thermal annealing of the Ni/Si(100) films

“…Nickel silicides can be formed by solid-state reaction of Si and thin nickel films, deposited on Si wafer, at a temperature well below the eutectic temperature of the system [6][7][8][9][10][11][12], although other techniques such as explosive silicidation [13], reactive deposition [14] and ion implantation [15][16][17] can also be used. In solid-state reaction technique, silicide formation is induced by thermal annealing in Ni/Si thin film system, using various annealing techniques such as isothermal furnace annealing, rapid thermal annealing (RTA), laser and electron beam annealing [6].…”

“…In solid-state reaction technique, silicide formation is induced by thermal annealing in Ni/Si thin film system, using various annealing techniques such as isothermal furnace annealing, rapid thermal annealing (RTA), laser and electron beam annealing [6]. It has been reported that the developed phases of nickel silicide (Ni 2 Si, NiSi and NiSi 2 ) are temperature-dependent and formed by different growth mechanisms [6][7][8][9][10][11][12]. Ni 2 Si, NiSi and NiSi 2 form in the temperature ranges of 200-350, 350-750 and 750-1000 • C, respectively [6][7][8][9][10][11][12].…”

“…It has been reported that the developed phases of nickel silicide (Ni 2 Si, NiSi and NiSi 2 ) are temperature-dependent and formed by different growth mechanisms [6][7][8][9][10][11][12]. Ni 2 Si, NiSi and NiSi 2 form in the temperature ranges of 200-350, 350-750 and 750-1000 • C, respectively [6][7][8][9][10][11][12]. Unlike Ni 2 Si and NiSi formation, which are diffusion controlled processes, NiSi 2 formation has been reported to be nucleation controlled [4,6,7,18].…”

“…NiSi is thermally stable only up to the temperatures of about 650-700 • C, thereafter high resistivity phase NiSi 2 starts to nucleate [6][7][8][9][10][11][12]18]. NiSi has been also reported to agglomerate during the silicidation process at temperature as low as 600 • C [6][7][8][9][10][11][12].…”