In situ Load- Pull MMIC for Large-Signal Characterization of mHEMT Devices at Submillimeter- Wave Frequencies

John, Laurenz; Ohlrogge, Matthias; Wagner, Stefan; Friesicke, Christian; Tessmann, A.; Leuther, A.; Zwick, Thomas

doi:10.1109/mwsym.2018.8439391

Cited by 2 publications

(1 citation statement)

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“…The load targets of the cascode stages were defined in large-signal load-pull simulations. For the 16-µm finger-width CS devices in the last two stages of the UA, gain-power tradeoff load impedances were defined considering large-signal load-pull simulations as well as in situ load-pull measurement data at 300 GHz [36].…”

Section: B Compact Pa Cell Modeling and Simulationmentioning

confidence: 99%

Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

John

Tessmann

Leuther

et al. 2020

IEEE Trans. THz Sci. Technol.

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In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280-330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic highelectron-mobility transistor (mHEMT) technology. Two power amplifier MMICs are reported, based on a compact unit amplifier cell, which is parallelized two times using two different Wilkinson power combiners. The Wilkinson combiners are designed using elevated coplanar waveguide and air-bridge thin-film transmission lines in order to implement low-loss 70-Ω lines in the back-endof-line of this InGaAs mHEMT technology. The five-stage SSPA MMICs achieve a measured small-signal gain around 20 dB over the 280-335-GHz frequency band. State-of-the-art output power performance is reported, achieving at least 13 dBm over the 286-310-GHz frequency band, with a peak output power of 13.7 dBm (23.4 mW) at 300 GHz. The PA MMICs are designed for a reduced chip width while maximizing the total gate width of 512 µm in the output stage, using a compact topology based on cascode and common-source devices, improving the output power per required chip width significantly.

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Section: B Compact Pa Cell Modeling and Simulationmentioning

confidence: 99%