A 280–310 GHz InAlAs/InGaAs mHEMT Power Amplifier MMIC with 6.7–8.3 dBm Output Power

John, Laurenz; Neininger, Philipp; Friesicke, Christian; Tessmann, A.; Leuther, A.; Schlechtweg, M.; Zwick, Thomas

doi:10.1109/lmwc.2018.2885916

Cited by 14 publications

(8 citation statements)

References 9 publications

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“…Having a metamorphic buffer layer and an indium phosphide (InP) epitaxial layer on a gallium arsenide (GaAs) substrate, mHEMT imparts additional advantages to each device such as excellent device characteristics, due to InP, and ease of processing due to GaAs. Recently, many reports on MMIC using mHMET have been reported, and foundry services, in which the mHEMT technology is used, have been conducted [10][11][12][13]. In this paper, we show the characteristics of a 0.1-μm mHEMT device manufactured by ETRI in-house mHEMT process with a 4-inch wafer.…”

Section: Introductionmentioning

confidence: 99%

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

et al. 2020

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We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.

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Section: Introductionmentioning

confidence: 99%

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

et al. 2020

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“…The investigated topology, based on multifinger cascode and CS cells, achieves excellent linearity and a measured OP 1dB 1-dB gain compression power above 10 mW, which is vital for the usage in THz communication systems and represents a significant improvement to previously reported cascode topologies in this mHEMT technology [24], [32], [40].…”

Section: Discussionmentioning

confidence: 90%

“…The focus of the presented PA MMICs was the design of a very compact PA core, to achieve high output power at a narrow chip width. The output power per required chip width of 67 mW/mm is improved by a factor of four compared to previously published cascode topologies in this mHEMT technology [24]. Since the output stage with two 8-finger CS devices in parallel does not require a larger chip width than the 8-finger cascode gain stages, the output power per required chip width is significantly increased compared to the results presented in [11], achieving approximately 5-dB more output power by doubling the required chip width of the PA core.…”

Section: Comparison To State Of the Artmentioning

confidence: 84%

“…The TFMSL interconnections depicted in Fig. 2 (MET2 TFMSL and MET2MET3 TFMSL), which are implemented in the matching networks of the reported PA circuits, have been widely used for the design of compact MMICs in this InGaAs mHEMT technology for a wide variety of applications [22]- [24]. MET1 is implemented as substrate shielding dc and RF ground and the TFMSL signal line is routed in MET2, using the 1.4-µm-thick BCB layer (BCB2) between MET1 and MET2 as dielectric substrate.…”

Section: Thin-film Transmission Linesmentioning

confidence: 99%

“…Compared to CS transistors, devices in cascode configuration can provide larger levels of small-signal gain and are often used in mHEMT PA circuits [24], [32]. However, the classical cascode, where the gate of the CG transistor is shorted for RF frequencies, does not provide significantly larger output power levels than a CS transistor while maintaining a large-signal condition for save long-term operation.…”

Section: A Unit Amplifier Design Considerationsmentioning

confidence: 99%

See 2 more Smart Citations

Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

John

Tessmann

Leuther

et al. 2020

IEEE Trans. THz Sci. Technol.

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In this article, we report on compact solid-state power amplifier (SSPA) millimeter-wave monolithic integrated circuits (MMICs) covering the 280-330-GHz frequency range. The technology used is a 35-nm gate-length InGaAs metamorphic highelectron-mobility transistor (mHEMT) technology. Two power amplifier MMICs are reported, based on a compact unit amplifier cell, which is parallelized two times using two different Wilkinson power combiners. The Wilkinson combiners are designed using elevated coplanar waveguide and air-bridge thin-film transmission lines in order to implement low-loss 70-Ω lines in the back-endof-line of this InGaAs mHEMT technology. The five-stage SSPA MMICs achieve a measured small-signal gain around 20 dB over the 280-335-GHz frequency band. State-of-the-art output power performance is reported, achieving at least 13 dBm over the 286-310-GHz frequency band, with a peak output power of 13.7 dBm (23.4 mW) at 300 GHz. The PA MMICs are designed for a reduced chip width while maximizing the total gate width of 512 µm in the output stage, using a compact topology based on cascode and common-source devices, improving the output power per required chip width significantly.

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Analysis of THz space communication link based on STK

Bai

Zhu

2021

J. Phys.: Conf. Ser.

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The characteristics of terahertz communication technology, such as large capacity, high speed and high security, make it stand out among many wireless communication technologies. For future space communication application scenarios, the link performance and beam pointing accuracy of the terahertz communication system were analyzed. The beam adjustment angular acceleration index were analyzed through STK.

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A 280–310 GHz InAlAs/InGaAs mHEMT Power Amplifier MMIC with 6.7–8.3 dBm Output Power

Cited by 14 publications

References 9 publications

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology

Analysis of THz space communication link based on STK

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