In-situ growth of HfO 2 on clean 2H-MoS 2 surface: Growth mode, interface reactions and energy band alignment

Chen, Chang Pang; Ong, Bin Leong; Ong, Sheau Wei; Ong, Weijie; Tan, Hui Ru; Chai, J. W.; Zhang, Zheng; Wang, Xinbo; Pan, Ji Sheng; Harrison, Leslie John; Kang, H. Chuan; Tok, Eng Soon

doi:10.1016/j.apsusc.2017.05.097

Cited by 8 publications

(5 citation statements)

References 41 publications

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“…[64]. Other two doublets at higher energies (166.8 eV and 168 eV; 169.5 eV and 170.7 eV respectively) represent oxidized sulfur species such as sulfate or sulfite [55,65]. The XPS spectrum of the bare S-AC support is similar to the spectra of the Mo samples, and it contains the same thiophenic doublet and a low amount of oxidized sulfur as the Mo-containing samples (Fig.…”

Section: Xps Analysismentioning

confidence: 77%

Ultradispersed (Co)Mo catalysts with high hydrodesulfurization activity

Ryaboshapka

Piccolo

Aouine

et al. 2022

Applied Catalysis B: Environmental

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Section: Xps Analysismentioning

confidence: 77%

Ultradispersed (Co)Mo catalysts with high hydrodesulfurization activity

Ryaboshapka

Piccolo

Aouine

et al. 2022

Applied Catalysis B: Environmental

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“…Second, the valence band of the 2H reference MoS 2 sample is formed by the hybridization of Mo 4d and S 3p, which generates five major bands within the binding energy range 0−10 eV. 43 An additional band peaking at ≈14 eV is assigned to the S 3s orbitals. The contribution of the S 3p and Mo 4d states to the overall valence band structure can be understood by an examination of the local projected density of states of the 2H-MoS 2 structure, which was calculated using the FEFF code (see Figure 4F).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…First, the mobility gap edge of a-MoS 2 shifts by ≈0.8 eV toward lower energy compared to that of c-MoS 2 , which is consistent with the aforementioned stronger absorption of a-MoS 2 in the near-infrared spectral region. Second, the valence band of the 2H reference MoS 2 sample is formed by the hybridization of Mo 4d and S 3p, which generates five major bands within the binding energy range 0–10 eV . An additional band peaking at ≈14 eV is assigned to the S 3s orbitals.…”

Section: Resultsmentioning

confidence: 99%

Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS₂: Implications for 2D Electronic Devices

Krbal

Prokop

Кононов

et al. 2021

ACS Appl. Nano Mater.

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Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS 2 , and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 °C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS 2 along the ⟨002⟩ crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for other 2D materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nanoand optoelectronic devices.

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“…Differences between amorphous MoS 4 and MoS 2 can also be observed by comparing their valence band (VB) spectra. The binding energy range 0−10 eV 46 is characterized by the hybridization of Mo 4d and S 3p. While the VB edges of both amorphous phases appear at the same binding energy, the VB of amorphous MoS 4 has a more intense band above 6 eV compared to that of amorphous MoS 2 .…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Improved Ordering of Quasi-Two-Dimensional MoS₂ via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS_2+x

Krbal

Prokop

Přikryl

et al. 2022

Crystal Growth & Design

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The synthesis of stoichiometric two-dimensional (2D) transition-metal dichalcogenides (TMDC) over large areas remains challenging. Using a combination of X-ray diffraction and X-ray absorption spectroscopy, we demonstrate the advantages of using a thin amorphous layer of S-rich MoS2 (MoS4 in this paper) for the growth of well-ordered crystalline MoS2 films via annealing at 900 °C. In contrast to the crystallization of stoichiometric amorphous MoS2, the crystallization of the as-deposited amorphous MoS4 phase shows the strong preferred ordering of layered MoS2 on a Si/SiO x nontemplating substrate with the dominant (002) crystallographic plane and accompanying Kiessig fringes, which indicate the improved crystallinity of the MoS2 layers. A similar effect can only be achieved by the templated crystallization of an amorphous MoS2 thin film deposited on a c-plane sapphire substrate. We suggest that the crystal growth improvement originates from the lower coordination number (CN) of the Mo atoms in the MoS4 amorphous phase (CN = 4) in comparison with that of amorphous MoS2 (CN = 6) and the gradual release of free sulfur atoms from the thin film during crystallization.

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In-situ growth of HfO 2 on clean 2H-MoS 2 surface: Growth mode, interface reactions and energy band alignment

Cited by 8 publications

References 41 publications

Ultradispersed (Co)Mo catalysts with high hydrodesulfurization activity

Ultradispersed (Co)Mo catalysts with high hydrodesulfurization activity

Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS₂: Implications for 2D Electronic Devices

Improved Ordering of Quasi-Two-Dimensional MoS₂ via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS_2+x

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In-situ growth of HfO 2 on clean 2H-MoS 2 surface: Growth mode, interface reactions and energy band alignment

Cited by 8 publications

References 41 publications

Ultradispersed (Co)Mo catalysts with high hydrodesulfurization activity

Ultradispersed (Co)Mo catalysts with high hydrodesulfurization activity

Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices

Improved Ordering of Quasi-Two-Dimensional MoS2 via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS2+x

Contact Info

Product

Resources

About

Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS₂: Implications for 2D Electronic Devices

Improved Ordering of Quasi-Two-Dimensional MoS₂ via an Amorphous-to-Crystal Transition Initiated from Amorphous Sulfur-Rich MoS_2+x