Pulsed laser (532 nm) deposited Ge2Sb2Te5 thin films were investigated by means of spectroscopic ellipsometry and Raman scattering spectroscopy. Tauc–Lorentz and Cody–Lorentz models were employed for the evaluation of optical functions of thin films in as-deposited (amorphous) and crystalline (cubic) phases. The models’ parameters (Lorentz oscillator amplitude, resonance energy, oscillator width, optical band gap, and Urbach energy) calculated for amorphous and crystalline states are discussed. The vibrational modes observed in Raman spectra of amorphous layers are attributed to GeTe4−nGen (n=1, 2, eventually 0) tetrahedra connected by corners (partly by edges) and SbTe3 units. The Raman spectra of crystalline thin films suggest that the local bonding arrangement around Ge atoms changes; GeTe component is thus mainly responsible for the phase transition in Ge2Sb2Te5 alloys.

We present an optimized approach for the deposition of Al2O3 (as a model secondary material) coating into high aspect ratio (≈180) anodic TiO2 nanotube layers using the atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the Al2O3 precursors on the resulting coating thickness, ALD processes with different exposure times (i.e., 0.5, 2, 5, and 10 s) of the trimethylaluminum (TMA) precursor were performed. Uniform coating of the nanotube interiors was achieved with longer exposure times (5 and 10 s), as verified by detailed scanning electron microscopy analysis. Quartz crystal microbalance measurements were used to monitor the deposition process and its particular features due to the tube diameter gradient. Finally, theoretical calculations were performed to calculate the minimum precursor exposure time to attain uniform coating. Theoretical values on the diffusion regime matched with the experimental results and helped to obtain valuable information for further optimization of ALD coating processes. The presented approach provides a straightforward solution toward the development of many novel devices, based on a high surface area interface between TiO2 nanotubes and a secondary material (such as Al2O3).

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We studied the optical properties of as-prepared (amorphous) and thermally crystallized (fcc) flash evaporated Ge2Sb2Te5 thin films using variable angle spectroscopic ellipsometry in the photon energy range 0.54–4.13 eV. We employed Tauc–Lorentz (TL) model and Cody–Lorentz (CL) model for amorphous phase and TL model with one additional Gaussian oscillator for fcc phase data analysis. The amorphous phase has optical bandgap energy Egopt=0.65 eV (TL) or 0.63 eV (CL) slightly dependent on used model. The Urbach edge of amorphous thin film was found to be ∼70 meV. Both models behave very similarly and accurately fit to the experimental data at energies above 1 eV. The CL model is more accurate in describing dielectric function in the absorption onset region. The thickness decreases ∼7% toward fcc phase. The bandgap energy of fcc phase is significantly lower than amorphous phase, Egopt=0.53 eV. The temperature dependent ellipsometry revealed crystallization in the range 130–150 °C. The bandgap energy of amorphous phase possesses temperature redshift −0.57 meV/K (30–110 °C). The crystalline phase has more complex bandgap energy shift, first +0.62 meV/K (150–180 °C) followed by −0.29 meV/K (190–220 °C). The optical properties (refractive index, extinction coefficient, and optical bandgap energy) of as-prepared and fcc flash evaporated Ge2Sb2Te5 thin films are very similar to those values previously reported for sputtered thin films.

The unique optical properties of phase change materials (PCMs) can be exploited to develop efficient reconfigurable photonic devices. Here, we design, model, and compare the performance of programmable 1 × 2 optical couplers based on: Ge2Sb2Te5, Ge2Sb2Se4Te1, Sb2Se3, and Sb2S3 PCMs. Once programmed, these devices are passive, which can reduce the overall energy consumed compared to thermo-optic or electro-optic reconfigurable devices. Of all the PCMs studied, our ellipsometry refractive index measurements show that Sb2S3 has the lowest absorption in the telecommunications wavelength band. Moreover, Sb2S3 -based couplers show the best overall performance, with the lowest insertion losses in both the amorphous and crystalline states. We show that by growth crystallization tuning at least four different coupling ratios can be reliably programmed into the Sb2S3 directional couplers. We used this effect to design a 2-bit tuneable Sb2S3 directional coupler with a dynamic range close to 32 dB. The bit-depth of the coupler appears to be limited by the crystallization stochasticity.

The utilization of the anodic TiO2 nanotube layers, with uniform Al2O3 coatings of different thicknesses (prepared by atomic layer deposition, ALD), as the new electrode material for lithium-ion batteries (LIBs), is reported herein. Electrodes with very thin Al2O3 coatings (∼1 nm) show a superior electrochemical performance for use in LIBs compared to that of the uncoated TiO2 nanotube layers. A more than 2 times higher areal capacity is received on these coated TiO2 nanotube layers (∼75 vs 200 μAh/cm2) as well as higher rate capability and coulombic efficiency of the charging and discharging reactions. Reasons for this can be attributed to an increased mechanical stability of the TiO2 nanotube layers upon Al2O3 coating, as well as to an enhanced diffusion of the Li+ ions within the coated nanotube layers. In contrast, thicker ALD Al2O3 coatings result in a blocking of the electrode surface and therefore an areal capacity decrease.