Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have demonstrated a very strong application potential. In order to realize it, the synthesis of stoichiometric 2D TMDCs on a large scale is crucial. Here, we consider a typical TMDC representative, MoS 2 , and present an approach for the fabrication of well-ordered crystalline films via the crystallization of a thin amorphous layer by annealing at 800 °C, which was investigated in terms of long-range and short-range orders. Strong preferential crystal growth of layered MoS 2 along the ⟨002⟩ crystallographic plane from the as-deposited 3D amorphous phase is discussed together with the mechanism of the crystallization process disclosed by molecular dynamic simulations using the Vienna Ab initio Simulation Package. We believe that the obtained results may be generalized for other 2D materials. The proposed approach demonstrates a simple and efficient way to fabricate thin 2D TMDCs for applications in nanoand optoelectronic devices.

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The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS2 using dielectric spectroscopy are presented. Both dipole‐relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process Ea and conductivity Eσ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.

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