In situ Doped Embedded-SiGe Source/Drain Technique for 32 nm Node p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor

Abstract

We study the level spacing distribution p(s) in the spectrum of random networks. According to our numerical results, the shape of p(s) in the Erdős-Rényi (E-R) random graph is determined by the average degree k and p(s) undergoes a dramatic change when k is varied around the critical point of the percolation transition, k = 1. When k 1, the p(s) is described by the statistics of the Gaussian orthogonal ensemble (GOE), one of the major statistical ensembles in Random Matrix Theory, whereas at k = 1 it follows the Poisson level spacing distribution. Closely above the critical point, p(s) can be described in terms of an intermediate distribution between Poisson and the GOE, the Brodydistribution. Furthermore, below the critical point p(s) can be given with the help of the regularized Gamma-function. Motivated by these results, we analyse the behaviour of p(s) in real networks such as the internet, a word association network and a protein-protein interaction network as well. When the giant component of these networks is destroyed in a node deletion process simulating the networks subjected to intentional attack, their level spacing distribution undergoes a similar transition to that of the E-R graph.

Probing local order in multiferroics by transmission electron microscopy

“…For instance, the diffraction patterns can be indexed and analyzed to achieve phase and crystal orientation mapping. Also, full 2D strain maps can be extracted by accurately measuring the position of the Bragg diffracted beams from each image pixel [94][95][96][97][98][99]. However, the non-uniform contrast present in the large diffraction discs (due to variations of thickness and bending across the specimen field of view) can result in an incorrect determination of their position and deliver results that are incorrect.…”

Growth and Processing Defects in CMOS Homo- and Hetero-Epitaxy

“…However, often a post-epitaxial ion implantation of the so-called HighlyDoped Drain (HDD) is performed for integration reasons (15). A high-dose ion implantation creates a significant amount of lattice damage and also strain relaxation in the SiGe layer (Fig.…”

“…In situ doping of the epitaxial embedded SiGe source and drain regions should in principle lead to sharp and steep junctions, which is highly desirable from a scaling viewpoint. However, often a post-epitaxial ion implantation of the so-called Highly-Doped Drain (HDD) is performed for integration reasons (15). A high-dose ion implantation creates a significant amount of lattice damage and also strain relaxation in the SiGe layer (Fig.…”

Influence of precursor gas on SiGe epitaxial material quality in terms of structural and electrical defects

“…With the downscaling of complementary metal-oxide-semiconductor (CMOS) transistors beyond the 10 nm technology node, it is required to reduce thermal budgets during epitaxial growth for fabricating group-IV-based electronic devices. Silicon germanium (Si 1−x Ge x ) alloy has been attracting attention not only as a channel material for pMOSFETs [1][2][3] because of its high hole mobility, but also as a source=drain (S=D) stressor for applying a local uniaxial strain to Si and Ge for pMOSFETs [4][5][6] and nMOSFETs, 7,8) respectively, to improve their carrier mobility.…”