In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al₂O₃) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition

MBE‐grown ZnO film on sapphire substrate with double buffer layers

“…On the other hand, when the growth temperature increased to 835 °C, the polarity changed to O-polar. Recently, ZnO films grown by MOVPE were found in Zn polarity [11]. Although the author did not explain the detailed reason, we noticed that they used low growth temperature which may be the answer for obtaining the Zn-polar film.…”

Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water

“…CVD has many technical advantages for industrial applications, including being able to achieve high rate growths on large surface areas, a wide selection of metal-organic source materials, easy purification by evaporation, and low-cost production. The CVD techniques developed so far use either dimethyl zinc (Zn(CH 3 ) 2 ) or diethyl zinc (Zn(C 2 H 5 ) 2 ) as the source for Zn, and O 2 [11,12], H 2 O [13,14], CO 2 [15], N 2 O [14] or (CH 3 ) 2 CHOH [16] as oxidation agents. Unfortunately, ZnO films produced using conventional CVD methods yield low-quality films compared to those prepared by MBE and PLD.…”

Epitaxial growth of ZnO films by helicon-wave-plasma-assisted sputtering

“…Many techniques such as laser molecular beam epitaxy (L-MBE) [3], metalorganic chemical vapor deposition (MOCVD) [4], pulsed laser deposition (PLD) [5] and sputtering (radio frequency magnetron sputtering and reactive sputtering) [6,7] have been used for epitaxial growth of ZnO films. Among these techniques, sputtering was considered to be one of the most promising methods for the fabrication of epitaxial films because of its low cost, simplicity, and low operating temperature.…”