Antiferromagnets having negligible net magnetization but a topologically nontrivial spin structure are a good testbed for investigating the intrinsic anomalous Hall effect (AHE). In this Letter, we explore L12-ordered Mn3Ir thin films, which are one of the noncollinear antiferromagnets predicted to exhibit the intrinsic AHE due to their topologically nontrivial spin structure. The anomalous Hall conductivity as large as σAHE = 40 Ω−1 cm−1 was observed at R.T. This value can be translated to the anomalous Hall conductivity per net magnetization M as |σAHE/M| = 0.6 V−1, which is much larger compared to those for general ferromagnetic materials. We also show that σAHE depends on the crystallinity of Mn3Ir as well as the chemical order parameter S characterizing a content of the L12 phase. Our results experimentally verify that L12-ordered Mn3Ir thin films exhibit the topologically originated AHE.
The Editor invites rnanirfartirrers of insfriimerits arid light niachine tools to keep Itini infornierl of' their new or iniproved prodiicts. The Instititte of Physics assiitnes no responsibility ,for the stafenients given below: in~~rniution f . r IIicse has been Electronic temperature controller.This relatively simple and compact controllcr is based The Scalamp built-in mirror galvanometer with tauton the use of a resistance thermometer in a n a.c. bridge. suspension, moving coil has been adapted as ;L direct-readingThe bridge output is amplified and controls an on-off relay. voltmeter having a resistance of I M!)/V on all ranges. Simple on-off control of this type is suitable when the thermal This compares favourably with many electronic voltmeters, lag of the controlled system is small. The instrument, which and is claimed to have the advantage of chcapness and is contained in a cast aluminium case, 64 s 79 x 4+ in., is capable of responding to temperature variations of 0. I" C and of controlling, through the relay contacts, currents of 5 A at 250 V a x . It is available in standard ranges between
Although bulk magnetic properties of various antiferromagnets have been vigorously studied since long ago, their properties in the form of thin films, which are more relevant to antiferromagnetic spintronic devices, have not been investigated as much. In this work, we characterized the N eel temperature of Cr 2 O 3 thin films by investigating the temperature dependence of the spin Hall magnetoresistance in Cr 2 O 3 /Pt bilayers. A precise determination of the N eel temperature was made possible by carefully designing the direction of the magnetic anisotropy in Cr 2 O 3 . The results provide a reliable way to determine the N eel temperature of antiferromagnetic thin films.
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