In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applications

Abstract

This work presents a detailed electrical characterization of planar InGaAs on Insulator MOSFETs from room temperature (namely 300 K) down to deep cryogenic temperatures (10 K). The main electrical parameters of MOSFET operation (threshold voltage Vt, low-field mobility μ0, and subthreshold swing, SS) were extracted in both linear and saturation regions of operation through the consolidated Y-function method, for gate lengths down to 10 nm. The extracted parameters are first analyzed versus temperature and length and then compared against a more mature technology such as Silicon FDSOI MOSFETs. The results reveal competing advantages of the III-V alloy, particularly when going down to cryogenic temperatures.