Impurity-limited mobility of semiconducting thin wire

Abstract

Sakaki [Jpn. J. Appl. Phys. 19, L735 (1980)] has investigated the mobility of semiconducting thin wire structures when the mobility of the wire is limited by scattering from ionized impurities which are located a fixed distance outside the wire. We have used a similar model to theoretically calculate the impurity-limited mobility of such semiconducting thin wires for the cases where the impurities are either in the wire itself (background impurities) or are distributed outside the wire (remote impurities) or are distributed uniformly both inside and outside the wire. For the case of scattering from the background impurities, we find that the mobility decreases with decreasing wire radius d as [ln (kd)]−2 where k is either the thermal or Fermi wave vector of the carriers. For the case of scattering from remote impurities, the size dependence of the impurity-limited mobility depends upon how the remote impurities are distributed outside the wire. When the distribution of ionized impurities outside the wire is uniform, the mobility is independent of the wire radius while, if the ionized impurities are separated from the wire by a fixed distance, we recover the results previously obtained by Sakaki. When the impurities are distributed uniformly both inside and outside the wire, the mobility again is size independent.

Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect

“…1. The mobility dependence on Nimp and Lsp shows the well-known trends, previously discussed for buried GaAs wires [3][4][5]. Figure 2 shows the same calculation as Fig.…”

Effect of electron–phonon interaction on the impurity binding energy in a quantum wire

“…• A. Theoretically, the electronic properties of a hydrogenic impurity in the quantum well [5,6,7,8] and the quantum wire [9,10,11,12,13,14] have been studied by many authors. The impurity binding energies of a quantum wire with infinite or finite potential barrier [9] and with different shapes of the cross-section [10,11] have been discussed.…”

Alloy‐disorder‐scattering‐limited mobility of electrons in cylindrical quantum well wires

“…The mobility of the electrons in the Q1D electron gas is limited by various scattering processes, which have relative importance at different ranges of temperature and carrier concentration. There have been calculations of electron scattering by acoustic phonon [8], impurity-limited mobility [2], phonon-limited mobility [3], the mobility of electrons scattered by impurities, by acoustic and polar optical phonons [4,9]. Alloy-disorder scattering is an important scattering mechanism when the confining quantum wire consists of a ternary semiconductor.…”