Effect of electron–phonon interaction on the impurity binding energy in a quantum wire

Chuu, Der–San; Chen, Yueh-Nan; Lin, Yuh Kae

doi:10.1016/s0921-4526(00)00451-8

Cited by 19 publications

(16 citation statements)

References 34 publications

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“…The effect of electron-optical phonon interaction on the hydrogenic impurity binding energy in cylindrical QWW is reported in Ref. [12]. In a previous work [13] we have calculated the effects of electron longitudinal optical phonon interaction on the binding energy and the polarizabilities of a shallow donor impurity located in the centre of a QWW with infinite barrier.…”

Section: Introductionmentioning

confidence: 98%

Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire

Zounoubi¹,

Messaoudi²,

Zorkani³

et al. 2001

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 98%

Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire

Zounoubi¹,

Messaoudi²,

Zorkani³

et al. 2001

Superlattices and Microstructures

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“…48 On the other hand, the influence of the electron-phonon interaction on the impurity states in GaAs cylindrical quantum wires have been shown to essentially manifest in the form of a small rigid blueshift. 49,50 Given the stronger polar character of the ZB nitrides, it would be of interest to have a detailed calculation on its influence in the impurity-related nonlinear optical response in semiconductor quantum wire made of such materials. This could be the subject of a future work.…”

Section: Resultsmentioning

confidence: 99%

Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields

Correa

Duque

2014

Journal of Applied Physics

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The electric field effects on the binding energies and the nonlinear optical properties of a donor impurity in a spherical quantum dot Effects of applied electric field and hydrostatic pressure on donor impurity states in cylindrical GaN/AlN quantum dot External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot J. Appl. Phys. 105, 053710 (2009); 10.1063/1.3080175Electric field effects on the states of a donor impurity in rectangular cross-section vacuum/GaAs/vacuum quantum-well wiresWe report a study on the optical absorption coefficient associated to hydrogenic impurity interstate transitions in zinc-blende GaN quantum wires of cylindrical shape taking into account the effects of externally applied static electric and magnetic fields. The electron states emerge within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement and external field effects. The nonlinear optical absorption is calculated using a recently derived expression for the dielectric susceptibility, obtained via a nonperturbative solution of the density-matrix Bloch equation. Our results show that this treatment eliminates not only the intensity-dependent bleaching effect but also the change in sign of the nonlinear contribution due to the combined effect of asymmetric impurity location and the applied electric field. V C 2014 AIP Publishing LLC. [http://dx.

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“…Among the various investigations of physical properties in Q1D GaN‐based NW structures, the optical features of impurity states have invoked researchers' special interest because of the importance of impurity states for the design and work of quantum components and devices 17–31. The impurity and defect sometimes will be introduced unintentionally during the fabrication process of quantum systems 18, 31, which may greatly influence the experimental optical spectra and other characteristics of the nanostructures.…”

Section: Introductionmentioning

confidence: 99%

“…The impurity and defect sometimes will be introduced unintentionally during the fabrication process of quantum systems 18, 31, which may greatly influence the experimental optical spectra and other characteristics of the nanostructures. Moreover, the optical spectra of impurity and defect states can be changed artificially via the adjustment of the quantum size and dielectric matrix 19. Hence the impurity states not only in zinc‐blende GaAs‐based Q1D QWR 17–23, but also in wurtzite GaN‐based Q1D NWs 25–31 have attracted a lot of interest.…”

Section: Introductionmentioning

confidence: 99%

Binding energies of bound polaron in a wurtzite nitride nanowire: Contributions of IO and QC phonon modes

Zhang

2011

Physica Status Solidi (b)

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By employing the two-parameter variational approach, the binding energies of bound polarons in a quasi-one-dimensional wurtzite nanowire (NW) are investigated. Two types of polar optical phonon modes, i.e., the interface optical (IO) and quasiconfined (QC) phonon modes of wurtzite NWs are taken in account. The results reveal that the phonon contribution to binding energy of bound polaron in GaN NWs reaches $370 meV. The quite large contribution of phonon modes to the total binding energy is mainly ascribed to the very strong electron-phonon coupling constant in GaN materials. Moreover, the IO modes plays more important role to the binding energies of bound polaron as the NW radius is small, while the QC modes dominates as the NW radius is relatively large. The calculated results of impurity binding energy are quite consistent with the recent experimental measurement. The numerical results also show that the two-parameter variational approach is necessary and suitable for the description of impurity states in wurtzite GaN NW structures. 1 Introduction Since the pioneering experimental work of Fan's group [1] on the synthesis of the first wurtzite GaN nanorods, the quasi-1-dimensional (Q1D) GaN-based nanowires (NWs) have attracted a considerable amount of attentions both in theoretical and experimental investigations [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. This is mainly due to the following three evident facts: the nitride materials (including GaN, AlN, InN, and their ternary compounds, AlGaN and InGaN) with strong atomic bonding and wide and adjustable directbandgap, which make them quite potential as a basis for the creation of reliable high-temperature and high-frequency nano-optoelectronic devices such as field-effect-transistors (FETs), high-brightness blue/green light-emitting diodes and laser diodes as well as photodetectors [2][3][4][5]; Q1D structure' confinement of NWs for carriers in two dimensions and freedom in the last dimension, promising more efficient lasers and optical gain as well as possible applications for optical waveguide and photovoltaic elements in comparisons with quantum wells (QWs) and quantum dots (QDs) [6][7][8][9][10]; the Q1D NW systems also playing an important role in testing and understanding fundamental concepts, such as the role of dimensionality and size in optical, electrical, and mechanical properties [11][12][13][14][15][16].

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Effect of electron–phonon interaction on the impurity binding energy in a quantum wire

Cited by 19 publications

References 34 publications

Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire

Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire

Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields

Binding energies of bound polaron in a wurtzite nitride nanowire: Contributions of IO and QC phonon modes

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