A theory of free-carrier absorption is given for quasi-one-dimensional ternary
semiconducting structures when the carriers are scattered by alloy disorder and
the radiation field is polarized along the length of the wire. The free-carrier
absorption coefficient is found to be an oscillatory function of the photon
frequency and of the area of the cross-section of the wire. It is found that the
absorption coefficient increases with decreasing transverse dimension of the
quantum wire. The results obtained are compared with those from the quantum
theory of free-carrier absorption in quasi-two-dimensional structures. In addition,
it was found that in quantum wire the electron–alloy-disorder interaction gives a
greater contribution to the absorption than the electron–acoustic phonon
interaction.
A theory of free-carrier absorption (FCA) is given for quantum
well (QW) structures from III-V semiconducting materials when
electrons are scattered by alloy disorder. It is found that
absorption coefficients due to alloy disorder and to phonons
are of the same order. The obtained results are compared with
those of the quantum theory of FCA in a bulk semiconductor and
it is found that the absorption coefficient decreases with
increasing photon frequency and increases with increasing
temperature. It is also shown that the absorption coefficient
increases with decreasing layer thickness. In addition, it was
found that in QW structures the
electron-alloy-disorder interaction gives a greater contribution
to the absorption than the electron-acoustic and piezoelectric
phonon interaction.
PACS 73.63.NmWe study the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using an infinite well model. The transverse part of the carrier wave function is taken to be a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional mobility. It is shown that the alloy-disorder-scattering-limited mobility increases with increasing wire radius and increases with increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility.
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