2009
DOI: 10.1002/pssc.200881193
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Polytypes in ferroelectric TlInS2 and its dielectric and optic properties

Abstract: Polytypes (Ps) of monoclinic TlInS2 with lattice parameters c (c ≈ 15 Å, c ≈ 30 Å, c ≈ 60 Å, c ≈ 120 Å and c ≈ 240 Å) have been obtained by long time annealing in vacuum or in sulfur vapour (P c ≈ 240 Å) of TlInS2 crystal at different temperatures‐T. From the temperature dependence of dielectric constant ϵ (T) of pure Ps it is established, that well known ferroelectric phase transition (FPT) in TlInS2 takes place with single peaks of dielectric anomaly (DA) at slightly different temperatures for different Ps. … Show more

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Cited by 18 publications
(20 citation statements)
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“…As reported by McMorrow et al , such defects in TlGaSe 2 form nearly regular defect subsystem with one defect per every four layers in paraphase (C‐phase). According to Alekperov et al , TlInS 2 , encountered in its most common variety as β‐polytype (monoclinic) may also have large amount of planar defects.…”
Section: Resultsmentioning
confidence: 99%
“…As reported by McMorrow et al , such defects in TlGaSe 2 form nearly regular defect subsystem with one defect per every four layers in paraphase (C‐phase). According to Alekperov et al , TlInS 2 , encountered in its most common variety as β‐polytype (monoclinic) may also have large amount of planar defects.…”
Section: Resultsmentioning
confidence: 99%
“…The main peculiarity of the PTs in β-TlInS 2 crystals consists in the fact that different polytypes can coexist in the crystalline matrix [12,13]. They are characterized by different lattice parameters c. The unit cell parameter c for different polytypes is equal to c = 2c*, 4c*, 8c* and 16c*, with c* = 15.18 Å.…”
Section: VImentioning
confidence: 99%
“…Excess of In atoms ((TlS) 0.5 -(InS) 0.5 + 0.1-0.01a.t. % In) in the melt causes growing of Tr-TlInS 2 , which has nearly the same physical and crystal parameters as M-TlInS 2 , differing from it only by angle between lattice parameters a and b , which is slightly greater than for M-crystal (π/2) [7]. However, the excess of Tl ((TlS) 0.5 -(InS) 0.5 + 0.1-0.01a.t.…”
Section: Introductionmentioning
confidence: 87%