1979
DOI: 10.1016/0022-3697(79)90148-3
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Impurity levels of iron-group ions in TiO2(II)

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Cited by 181 publications
(83 citation statements)
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“…43 Mizushima et al, from optical absorption data and photocurrent measurements, calculated the impurity levels of some iron-group ions in rutile. 64 The presence of such levels was invoked by Grätzel and Howe 44 to explain the role of Fe, V, and Mo on the photoreactivity of TiO 2 colloids.…”
Section: Discussionmentioning
confidence: 98%
“…43 Mizushima et al, from optical absorption data and photocurrent measurements, calculated the impurity levels of some iron-group ions in rutile. 64 The presence of such levels was invoked by Grätzel and Howe 44 to explain the role of Fe, V, and Mo on the photoreactivity of TiO 2 colloids.…”
Section: Discussionmentioning
confidence: 98%
“…Recent reports from Klosek et al also indicate that V 4+ -doped TiO 2 is quite active under visible-light irradiation [17]. Visible absorption in these catalysts is indicative of the excitation of a 3d electron from a V 4+ center into the TiO 2 conduction band [18]. To the best of our knowledge, there has been no related theoretical work which attempts to rationalize and explain the relationship between electronic structure and photocatalytic activity underlined by these experimental observations.…”
Section: Introductionmentioning
confidence: 89%
“…4) Experimentally, the formation of localized TM dopant states have been studied by electron spin resonance in TiO 2 crystals where the Fermi level position was adjusted by Li doping. 5) In this paper, we report on a systematic photoemission spectroscopy study of TM-doped (TM = V, Cr, Mn, Fe, Co, and Ni) TiO 2 films grown on Nb-doped TiO 2 single crystal substrates for various film thicknesses and including a non-doped TiO 2 /Nb:TiO 2 sample as a reference. In this study, there are two methodological key points: The first is the use of the combinatorial laser molecular beam epitaxy (LMBE) method, 6) which enabled us to grow thickness gradient samples for an efficient trace of thickness-dependent electronic properties.…”
Section: Introductionmentioning
confidence: 99%