Advancing organohalide perovskite solar cells requires understanding of carrier dynamics. Electron-hole recombination is a particularly important process because it constitutes a major pathway of energy and current losses. Grain boundaries (GBs) are common in methylammonium lead iodine CH3NH3PbI3 (MAPbI3) perovskite polycrystalline films. First-principles calculations have suggested that GBs have little effect on the recombination; however, experiments defy this prediction. Using nonadiabatic (NA) molecular dynamics combined with time-domain density functional theory, we show that GBs notably accelerate the electron-hole recombination in MAPbI3. First, GBs enhance the electron-phonon NA coupling by localizing and contributing to the electron and hole wave functions and by creating additional phonon modes that couple to the electronic degrees of freedom. Second, GBs decrease the MAPbI3 bandgap, reducing the number of vibrational quanta needed to accommodate the electronic energy loss. Third, the phonon-induced loss of electronic coherence remains largely unchanged and not accelerated, as one may expect from increased electron-phonon coupling. Further, replacing iodines by chlorines at GBs reduces the electron-hole recombination. By pushing the highest occupied molecular orbital (HOMO) density away from the boundary, chlorines restore the NA coupling close to the value observed in pristine MAPbI3. By introducing higher-frequency phonons and increasing fluctuation of the electronic gap, chlorines shorten electronic coherence. Both factors compete successfully with the reduced bandgap relative to pristine MAPbI3 and favor long excited-state lifetimes. The simulations show excellent agreement with experiment and characterize how GBs and chlorine dopants affect electron-hole recombination in perovskite solar cells. The simulations suggest a route to increased photon-to-electron conversion efficiencies through rational GB passivation.

Femtosecond optical pump-probe spectroscopy with 10 fs visible pulses is employed to elucidate the ultrafast carrier dynamics of few-layer MoS2. A nonthermal carrier distribution is observed immediately following the photoexcitation of the A and B excitonic transitions by the ultrashort, broadband laser pulse. Carrier thermalization occurs within 20 fs and proceeds via both carrier-carrier and carrier-phonon scattering, as evidenced by the observed dependence of the thermalization time on the carrier density and the sample temperature. The n(-0.37 ± 0.03) scaling of the thermalization time with carrier density suggests that equilibration of the nonthermal carrier distribution occurs via non-Markovian quantum kinetics. Subsequent cooling of the hot Fermi-Dirac carrier distribution occurs on the ∼ 0.6 ps time scale via carrier-phonon scattering. Temperature- and fluence-dependence studies reveal the involvement of hot phonons in the carrier cooling process. Nonadiabatic ab initio molecular dynamics simulations, which predict carrier-carrier and carrier-phonon scattering time scales of 40 fs and 0.5 ps, respectively, lend support to the assignment of the observed carrier dynamics.

Photoexcitation of the plasmon band in metallic nanoparticles adsorbed on a TiO2 surface initiates many important photovoltaic and photocatalytic processes. The traditional view on the photoinduced charge separation involves excitation of a surface plasmon, its subsequent dephasing into electron-hole pairs, followed by electron transfer (ET) from the metal nanoparticle into TiO2. We use nonadiabatic molecular dynamics combined with time-domain density functional theory to demonstrate that an electron appears inside TiO2 immediately upon photoexcitation with a high probability (~50%), bypassing the intermediate step of electron-hole thermalization inside the nanoparticle. By providing a detailed, atomistic description of the charge separation, energy relaxation, and electron-hole recombination processes, the simulation rationalizes why the experimentally observed ultrafast photoinduced ET in an Au-TiO2 system is possible in spite of the fast energy relaxation. The simulation shows that the photogenerated plasmon is highly delocalized onto TiO2, and thus, it is shared by the electron donor and acceptor materials. In the 50% of the cases remaining after the instantaneous photogeneration of the charge-separated state, the electron injects into TiO2 on a sub-100 fs time scale by the nonadiabatic mechanism due to high density of acceptor states. The electron-phonon relaxation parallels the injection and is slower, resulting in a transient heating of the TiO2 surface by 40 K. Driven by entropy, the electron moves further into TiO2 bulk. If the electron remains trapped at the TiO2 surface, it recombines with the hole on a picosecond time scale. The obtained ET and recombination times are in excellent agreement with the experiment. The delocalized plasmon state observed in our study establishes a novel concept for plasmonic photosensitization of wide band gap semiconductors, leading to efficient conversion of photons to charge carriers and to hybrid materials with a wide variety of applications in photocatalysis and photovoltaics.