We report for the first time the occurrence of light-induced ferromagnetic order in the III-V-based diluted magnetic semiconductor heterostructures (In,Mn)As/GaSb. We believe that the phenomenon is based on the generation of excess carriers (holes) in the (In,Mn)As layer by the irradiation of light, which enhances a carrier-mediated ferromagnetic interaction between Mn ions.
The effect of doping a wide range of transition metals (TMs) including V, Cr, Mn, Fe, Co, and Ni into rutile TiO 2 films grown on Nb-doped TiO 2 (110) single-crystal substrates was investigated by photoemission spectroscopy and X-ray absorption spectroscopy. For all TM-doped TiO 2 films, the Ti 2p and O 1s core levels were similarly shifted to lower binding energies with increasing film thickness and the shifts were similarly saturated at a film thickness of about 15 nm. These peak shifts could be interpreted in terms of the Fermi level shift, indicating that dopants trap excess electrons from the Ti 3d band like acceptors. The present systematic data revealed that the magnitude of the saturated Fermi level shift correlates well with the effective charge transfer energy.
The authors have found anomalous thickness and dopant effects on photochemical deposition of Ag on the epitaxial heterostructures of TiO2(110) and V:TiO2(110)∕Nb:TiO2(110). The photodeposition of Ag on TiO2(110)∕Nb:TiO2(110) is limited to a specific film thickness region of about 5nm and the V doping is found to enhance the photoactivity, irrespective of the film thickness, on V:TiO2(110)∕Nb:TiO2(110). They have also found that the film thickness for maximum photoactivity depends on the wavelength of the irradiated light.
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