Impurity core effects on electron mobility in N type silicon

Daga, O. P.; Khokle, W.S.

doi:10.1088/0022-3719/5/24/010

Cited by 7 publications

(2 citation statements)

References 8 publications

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“…In particular, the electron mobility is lower for As than P doped Si [2] and the hole mobility is lower for Ga than B doped Si [3,4]. Several authors attempted to explain the different mobility in P and As doped Si introducing impurity-core effect in the calculations [5][6][7][8] but the modification is too weak to account for the experimental results [9]. The hole mobility is a more complicated task, the effect of chemical species has not even been modelled and a limited amount of experimental data is available [3,4].…”

Section: Introductionmentioning

confidence: 99%

Carrier mobility and strain effect in heavily doped p-type Si

Romano

Bastiani

Miccoli

et al. 2006

Materials Science and Engineering: B

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Section: Introductionmentioning

confidence: 99%

Carrier mobility and strain effect in heavily doped p-type Si

Romano

Bastiani

Miccoli

et al. 2006

Materials Science and Engineering: B

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“…There were several attempts in the past to explain these differences by impurity-core effects. 2,3 Ralph et al 4 introduced a central-cell scattering potential determined empirically using bound state energies of donors. Later, El-Ghanem and Ridley 5 employed a square-well impurity core potential.…”

Section: Introductionmentioning

confidence: 99%

Influence of the doping element on the electron mobility in n-silicon

Kaiblinger-Grujin

Kosina

Selberherr

1998

Journal of Applied Physics

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We present a theoretical approach to study the dependence of the electron mobility on the dopant species in n-doped silicon under low electric fields. The electron charge distribution of the impurities is calculated by the Thomas-Fermi theory using the energy functional formulation. Ionized impurity scattering has been treated within the Born approximation. Our model accounts for degenerate statistics, dispersive screening and pair scattering, which become important in heavily doped semiconductors. The dielectric function is accurately approximated by a rational function. A new expression for the second Born amplitude of a Yukawa-like charge distribution is derived, which now depends on the atomic and electron numbers of the impurity ion. Monte Carlo simulations including all important scattering mechanism have been performed in the doping concentration range from 10 15 to 10 21 cm Ϫ3. The agreement with experimental data is excellent. The results confirm the lower electron mobility in As-doped silicon in comparison to P-doped silicon.

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