Impurity Binding Energy of a Cylindrical Quantum Wire in a Magnetic Field

Abstract

By using the strong-perturbation theory, suitable trial wave functions are chosen and the ground-state energy and the binding energy of the ground state of a hydrogenic donor in a quantum wire are calculated in the presence of a uniform magnetic field applied parallel to the wire axis. The quantum wire is assumed to be a cylinder of GaAs having an infinite confining potential. The ground-state energy and the binding energy increase as the strength of the magnetic field increases. Our results agree with those of previous calculations. The calculating method is novel and has general significance.

Binding energy of impurity states in a parabolic quantum dot in a strong magnetic field

“…The study of impurity states in semiconductors is imperative as the addition of impurities can change the properties of any quantum device dramatically. These effects have been studied by Zhigang et al [5], and Szwacka [6]. They find that the binding energy depends on the impurity position and on the magnitude of magnetic and electric fields applied on the structure.…”

Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire

“…In Refs [18] and [19] the authors have studied the hydrogenic impurity binding energy in QWWs and QDs in the presence of a magnetic field by using a variational approach. Zhigang et al [20] have calculated the binding energy of the ground state of a hydrogenic donor in a cylindrical wire in the presence of a magnetic field applied parallel to the wire axis as a function of the wire radius and magnetic field intensity. The effect of magnetic field on the polarizability of a shallow donor in QD has been analysed by Feddi et al [21] using an infinite confinement potential case.…”

Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well

“…The study of impurity states in semiconductor states is imperative as the addition of impurities can change the properties of any quantum device dramatically. These effects have been studied by Zhigang et al [9] and Szwacka [10]. Combining these with the external perturbations, such as hydrostatic pressure and temperature, one can tune the electronic states with respect to one another, thus revealing the nature and extend of various interactions [11].…”