Superlattices and Microstructures volume 43, issue 1, P63-71 2008 DOI: 10.1016/j.spmi.2007.06.007 View full text
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A. John Peter, K. Navaneethakrishnan

Abstract: The ground state and a few excited state energies of a hydrogenic donor in a quantum well are computed in the presence of pressure and temperature. The binding energies are worked out for GaAs/Ga 1−x Al x As structures as a function of well size when the pressure and temperature are applied simultaneously. A variational approach within the effective mass approximation is considered. The results show that for a constant applied pressure, an increase in temperature results in a decrease in donor impurity bindin…

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