2008
DOI: 10.1016/j.spmi.2007.06.007
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Simultaneous effects of pressure and temperature on donors in a GaAlAs/GaAs quantum well

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Cited by 70 publications
(14 citation statements)
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“…We are interested in studying the Ga 1−x Al x As/GaAs structure of an asymmetric multiple step quantum well (AMS QW) and asymmetric inverse V-shaped multiple step quant um well (AIVSMS QW), as different from literature [16,[19][20][21]. Because GaAlAs/GaAs QW samples are useful in modern photo-electronics and high-speed electronic devices, the pres sure and external field addiction of the electrical and optical characteristics in the connected systems have been considered widely [22][23][24][25][26]. This study focuses on the theoretical work of NOR, SHG and THG coefficients depending on ILF intensity in AMS QWs and AIVSMS QWs.…”
Section: Introductionmentioning
confidence: 99%
“…We are interested in studying the Ga 1−x Al x As/GaAs structure of an asymmetric multiple step quantum well (AMS QW) and asymmetric inverse V-shaped multiple step quant um well (AIVSMS QW), as different from literature [16,[19][20][21]. Because GaAlAs/GaAs QW samples are useful in modern photo-electronics and high-speed electronic devices, the pres sure and external field addiction of the electrical and optical characteristics in the connected systems have been considered widely [22][23][24][25][26]. This study focuses on the theoretical work of NOR, SHG and THG coefficients depending on ILF intensity in AMS QWs and AIVSMS QWs.…”
Section: Introductionmentioning
confidence: 99%
“…In certain theoretical studies related to different lowdimensional semiconductor structures, different confinement potentials denote that the donor binding energy decreases as a function of external electric field. [16][17][18][19] Most recently, Ghazi et al have investigated the effects of the external electric fields on the (In,Ga)NGaN spherical quantum dots by using the Ritz variational method based on the effective-mass approximation and finite potential. [20] Erdogan et al have studied the effects of both the external electric and magnetic fields on the self-polarization and binding energy of hydrogenic impurity confined in an infinite quantum wire.…”
Section: Introductionmentioning
confidence: 99%
“…Particularly, the presence of hydrogenic‐like impurity centers can increase the conductivity in several orders of magnitude, a fact in which the application of an external magnetic field has an important influence. The measurement of low‐temperature photoluminescence spectra in InAs nanostructures under hydrostatic pressure has motivated several theoretical studies about the hydrostatic pressure effects on the neutral donor energy spectrum features confined in reduced dimension spaces . This is because the application of hydrostatic pressure leads to modifications of the bulk carrier energy structure, allowing the understanding of some low‐dimensional systems optical properties.…”
Section: Introductionmentioning
confidence: 99%
“…This is because the application of hydrostatic pressure leads to modifications of the bulk carrier energy structure, allowing the understanding of some low‐dimensional systems optical properties. Theoretical calculations about the effect of the hydrostatic pressure on the binding energy of neutral donors in quantum wells (QWs) have shown that hydrostatic pressure tends to modify the hydrogenic impurity spectra . Studies about the influence of combined effects such as hydrostatic pressure–temperature and hydrostatic pressure–electric or magnetic fields on the optical properties and energy structure of neutral donors confined in a single or double QWs have been performed.…”
Section: Introductionmentioning
confidence: 99%