For asymmetric triple quantum wells (ATQW) the linear and nonlinear optical absorption coefficient (OAC) and the optical refractive index change (ORIC) are analyzed according to the intense laser field (ILF). The obtained results show that the ILF parameter (α 0 ) has an important effect on the shape and height of the confined potential profile of the ATQW, and alterations in the energy levels and the dipole moment matrix elements depend on the shape of the confinement potential. For α 0 = 10 nm (according to the parameters used in this study), ATQW turns into an asymmetric wider double confinement potential. As a consequence of the energy difference between the energy states, the absorption spectrum of (1-2) and (1-3) optical transitions initially shows a redshift (up to α 0 = 6 nm and α 0 = 4 nm, respectively) and then indicates a blueshift by increasing the ILF. For the (2-3) transition, the optical absorption spectrum continuously shows a blueshift and displays an oncoming shift toward the higher energies. Thus, the linear and nonlinear OAC and ORIC may be adjusted by modifying the ILF parameter. Our results are of use in the investigation into new ways of manipulating the optoelectronic properties of triple quantum well devices.
Highlights• The electronic and optical properties of ATQW vary with increasing ILF value.• The effect of ILF on the quantum well (QW) differs depending on the shape of the QW.• OAC and ORIC change with rising ILF.• The absorption spectrum shows blueshifts or redshifts depending on the ILF.
For square-step quantum wells (SSQWs) and graded-step quantum wells (GSQWs), the nonlinear optical rectification (NOR), second harmonic generation (SHG) and third harmonic generation (THG) coefficients under an intense laser field (ILF) are analyzed. The found results indicate that ILF can ensure a vital influence on the shape and height of the confined potential profile of both SSQWs and GSQWs, and alterations of the dipole moment matrix elements and the energy levels are adhered on the profile of the confined potential. According to the results, the potential profile and height of the GSQWs are affected more significantly by ILF intensity compared to SSQWs. These results indicate that NOR, SHG and THG coefficients of SSQWs and GSQWs may be calibrated in a preferred energy range and the magnitude of the resonance peak (RP) by tuning the ILF parameter. It is feasible to classify blue or red shifts in RP locations of NOR, SHG and THG coefficients by varying the ILF parameter. Our results can be useful in investigating new ways of manipulating the opto-electronic properties of semiconductor QW devices.
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