Impurity band in<i>p</i>-type β-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">FeSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Arushanov, E.; Kloc, Ch.; Bücher, E.

doi:10.1103/physrevb.50.2653

Cited by 101 publications

(80 citation statements)

References 11 publications

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“…6 Very recently, however, some luminescence has been successfully measured in ion-beam-synthetized samples, 7 whereas larger mobilities ͑up to 60 times larger than in films͒ and low-temperature photoconductivity were observed in single-crystalline specimens. 8 Furthermore, theoretical studies emphasized that if an indirect gap is present in the equilibrium configuration, slightly smaller than the direct one, 9 the situation may be reversed by the presence of strain, due to the large coupling between the electronic bands and the lattice distortions. 10 Therefore, it is clear that a better understanding of ␤-FeSi 2 single crystals is necessary in order to assess the intrinsic properties and to share the new effects induced by the epitaxial configuration.…”

Section: Introductionmentioning

confidence: 99%

Measurement and simulation of anisotropy in the infrared and Raman spectra of Β-FeSi2single crystals

et al. 1997

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In this paper we show that the orthorhombic phase of FeSi 2 ͑stable at room temperature͒ displays a sizable anisotropy in the infrared spectra, with minor effects in the Raman data too. This fact is not trivial at all, since the crystal structure corresponds to a moderate distortion of the fluorite symmetry. Our analysis is carried out on small single crystals grown by flux transport, through polarization-resolved far-infrared reflectivity and Raman measurements. Their interpretation has been obtained by means of the simulated spectra with tightbinding molecular dynamics. ͓S0163-1829͑97͒05418-0͔

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Section: Introductionmentioning

confidence: 99%

Measurement and simulation of anisotropy in the infrared and Raman spectra of Β-FeSi2single crystals

et al. 1997

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“…An acceptor level in ␤-FeSi 2 is reported by several authors. 35,36 Quantitative details of the energy balance will follow after the interpretation of the excitonic transition 0.809 eV ͑2 K͒. The transition at 0.809 eV, as mentioned above, has a linewidth of 10 meV ͑2 K͒ and, as we have seen in Fig.…”

Section: Resultsmentioning

confidence: 84%

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

Lang

Amaral

Menêses

2010

Journal of Applied Physics

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We investigated the optical absorption of the fundamental band edge and the origin of the emission from β-FeSi2 nanoparticles synthesized by ion-beam-induced epitaxial crystallization of Fe+ implanted SiO2/Si(100) followed by thermal annealing. From micro-Raman scattering and transmission electron microscopy measurements it was possible to attest the formation of strained β-FeSi2 nanoparticles and its structural quality. The optical absorption near the fundamental gap edge of β-FeSi2 nanoparticles evaluated by spectroscopic ellipsometry showed a step structure characteristic of an indirect fundamental gap material. Photoluminescence spectroscopy measurements at each synthesis stage revealed complex emissions in the 0.7–0.9 eV spectral region, with different intensities and morphologies strongly dependent on thermal treatment temperature. Spectral deconvolution into four transition lines at 0.795, 0.809, 0.851, and 0.873 eV was performed. We concluded that the emission at 0.795 eV may be related to a radiative direct transition from the direct conduction band to an acceptor level and that the emission at 0.809 eV derives from a recombination of an indirect bound exciton to this acceptor level of β-FeSi2. Emissions 0.851 and 0.873 eV were confirmed to be typical dislocation-related photoluminescence centers in Si. From the energy balance we determined the fundamental indirect and direct band gap energies to be 0.856 and 0.867 eV, respectively. An illustrative energy band diagram derived from a proposed model to explain the possible transition processes involved is presented.

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“…[12]. It is worth mentioning that a high concentration of deep acceptor levels was also observed in undoped [4] and Al-doped b-FeSi 2 single crystals [5].…”

Section: Resultsmentioning

confidence: 96%

“…Using Eq. (1), the values of N A 2 and e 2 were calculated in accordance with the method, presented in [5]. The obtained values of…”

Section: Resultsmentioning

confidence: 99%

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Hole Mobility in Cr-Doped p-Type ?-FeSi2 Single Crystals

Arushanov

Tomm

Ivanenko

et al. 1998

phys. stat. sol. (b)

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The analysis of mobility in Cr-doped p-type b-FeSi 2 single crystals is performed taking into account acoustic, non-polar and polar optical phonon scattering, scattering by ionised impurities and space charge scattering. The dominant scattering mechanisms are determined. The value of the valence band deformation potential is estimated. The temperature dependence of the Hall coefficient is explained in the limit of a two acceptor±one donor model. The value of the activation energy of the deep acceptors, the concentration of the shallow and deep acceptors as well as the concentration of the compensating donors were estimated.

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Impurity band inp-type β-FeSi2

Cited by 101 publications

References 11 publications

Measurement and simulation of anisotropy in the infrared and Raman spectra of Β-FeSi2single crystals

Measurement and simulation of anisotropy in the infrared and Raman spectra of Β-FeSi2single crystals

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

Hole Mobility in Cr-Doped p-Type ?-FeSi2 Single Crystals

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