Measurement and simulation of anisotropy in the infrared and Raman spectra of Β-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">FeSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>single crystals

Guizzetti, G.; Marabelli, F.; Patrini, M.; Pellegrino, P.; Pivac, Branko; Miglio, Leo; Meregalli, V.; Lange, H.; Henrion, W.; Tomm, V.

doi:10.1103/physrevb.55.14290

Cited by 43 publications

(21 citation statements)

References 27 publications

(20 reference statements)

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“…pointed out that the highest-intensity peak was at about 250 cm −1 for the Raman spectra measured on single crystalline β-FeSi 2 [23]. Our phonon energy agreed with those reported values.…”

supporting

confidence: 82%

Indirect optical absorption of single crystalline β-FeSi2

Udono

Kikuma

Okuno

et al. 2004

Applied Physics Letters

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We investigated optical absorption spectra near the fundamental absorption edge of β-FeSi 2 single crystals by transmission measurements. The phonon structure corresponding to the emission and absorption component was clearly observed in the low-temperature absorption spectra. Assuming exciton state in the indirect allowed transition, we determined a phonon energy of 0.031 ± 0.004 eV. A value of 0.814 eV was obtained for the exciton transition energy at 4K. * Electronic address: udono@ee.ibaraki.ac.jp 1

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supporting

confidence: 82%

Indirect optical absorption of single crystalline β-FeSi2

Udono

Kikuma

Okuno

et al. 2004

Applied Physics Letters

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“…With the rise in annealing temperature, the spectral intensity is enhanced, leading to Raman peaks for Sample #2, which are rather clearer at three particular wavenumbers: 177, 194, and 248 cm −1 . Those numbers are in good agreement with those in the literature [6], thus suggesting the formation of β-FeSi 2 at annealing temperatures higher than 350 • C.…”

Section: Formation Of β-Fesi 2 Dropletssupporting

confidence: 82%

Low temperature formation of .BETA.-FeSi2 polycrystalline microstructure by pulsed laser deposition and thermal annealing

Sugawara

Nakamura

Oouchi

et al. 2004

IEICE Electron. Express

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β-FeSi 2 polycrystalline microstructure was successfully formed at exceptionally low temperature in the form of droplet with room temperature pulsed laser deposition and post-annealing below 350 • C employed. Evidence of the β-phase formation was obtained through microscopic Raman spectroscopy and TEM analysis. The low temperature nature may originate from formation of intermediate amorphous phase possibly provided by quick heat removal from Fe-Si melts generated by laser ablation. This low temperature scheme offers an alternative method of producing polycrystalline β-FeSi 2 without higher temperature processes, which could be beneficially compatible with the standard Si device fabrication processes.

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“…The origin of these peaks might be attributed to the contribution from different oriented structures of the film. From the IR study of single-crystalline ␤-FeSi 2 specimens with polarized light [13], it has been demonstrated that there are remarkable differences between the IR spectra obtained at different polarizations with respect the crystal axis, with the position of the peaks and their relative intensity being different. Consequently, in our polycrystalline ␤-FeSi 2 films, the observed simple five phonon pattern can be understood as the convolution of individual contributions from crystal grains having different orientations and sizes.…”

Section: Resultsmentioning

confidence: 98%