2018
DOI: 10.1007/s00339-018-1945-2
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Improving the electrical and optical properties of CuCrO2 thin film deposited by reactive RF magnetron sputtering in controlled N2/Ar atmosphere

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Cited by 20 publications
(15 citation statements)
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“…All crystallite sizes were calculated from full width of half maximum (FWHM) of the XRD peaks by using the Debye-Scherrer equation ( τ = Kλ / βcosθ ) 61,62 ( τ is the size of the crystallite, K is Scherrer constant 0.94, λ is the X-ray wavelength which in this case is 1.54Å produced by a copper pole, β is Δ(2 θ ) (FWHM) of the XRD peaks, and θ represents the angles where the peaks are positioned 63 ). The crystallite sizes of the crystal structures formed in the bottom layer were calculated to be 30 nm for c-TiN and 30 nm for c-TiCrN, in TiAlN layer; 12 nm for c-TiN, 6.5 nm for h-TiAlN, and 22 nm for c-AlN, in the third layer, TiAlSiN; 9.8 nm for c-TiN, 11.1 nm for h-TiAlN, and 22.73 nm for h-Si 3 N 4 , and in the fourth layer (TiAlSiCN) crystallite sizes where 6.47 nm for c-TiN, 6.14 nm for c-TiCN, and 16.7 nm for c-AlN.…”
Section: Resultsmentioning
confidence: 99%
“…All crystallite sizes were calculated from full width of half maximum (FWHM) of the XRD peaks by using the Debye-Scherrer equation ( τ = Kλ / βcosθ ) 61,62 ( τ is the size of the crystallite, K is Scherrer constant 0.94, λ is the X-ray wavelength which in this case is 1.54Å produced by a copper pole, β is Δ(2 θ ) (FWHM) of the XRD peaks, and θ represents the angles where the peaks are positioned 63 ). The crystallite sizes of the crystal structures formed in the bottom layer were calculated to be 30 nm for c-TiN and 30 nm for c-TiCrN, in TiAlN layer; 12 nm for c-TiN, 6.5 nm for h-TiAlN, and 22 nm for c-AlN, in the third layer, TiAlSiN; 9.8 nm for c-TiN, 11.1 nm for h-TiAlN, and 22.73 nm for h-Si 3 N 4 , and in the fourth layer (TiAlSiCN) crystallite sizes where 6.47 nm for c-TiN, 6.14 nm for c-TiCN, and 16.7 nm for c-AlN.…”
Section: Resultsmentioning
confidence: 99%
“…We evacuated the chamber to a base pressure of 3×10 -5 mbar using Pfeiffer diaphragm and turbomolecular pumps. To initiate the plasma, we increased the pressure to 1.2×10 -1 mbar by inserting a mixture of Ar and N grade 5 gasses into the chamber and applying an RF power of 150 W. Then, we reduced the pressure to 5×10 -3 mbar in which the sputtered thin film has the highest quality 44 and deposited a ~100 nm 17 layer of co-doped CuCrO2 while heating the substrates with a temperature of ~400 °C for better crystallinity and incorporation of N into the delafossite lattice. We also performed a postdeposition annealing step on the (Mg, N)-doped CuCrO2 layers in a vacuum furnace with 2×10 -5 mbar pressure at 900 °C for 2 h.…”
Section: Methodsmentioning
confidence: 99%
“…37 and yielded the best results with Mg doping by Nagarajan et al in 2001 38 . Moreover, CuCrO2 has been prepared by both chemical and physical methods, including metal-organic chemical vapor deposition 39 , spray pyrolysis 40 , sol-gel 41 , pulsed laser deposition 42 , and different kinds of the sputtering method 37,[43][44][45] . Among these methods, radio-frequency (RF) magnetron sputtering has yielded the best results so far 38,46 .…”
Section: Introductionmentioning
confidence: 99%
“…Substitution of the M 3+ cation in the delafossite structure has been widely investigated in order to further reduce the localisation of the valence band and enable greater p-type conductivity. Cr, [42][43][44][45][46] Sc, 47 Y, 47 Ga, 48,49 and In have all been studied, 50 with CuCrO 2 achieving the best performance -p-type conductivity of 278 S cm À1 and an optical gap of 3.52 eV when co-doped as Mg:N-CuCrO 2 . 45 This is due to the large degree of covalency that is achieved in Cu-O-Cr-O-Cu linkages compared to the other M 3+ cations, demonstrated through Bader charge analysis and partial electronic density of states calculations.…”
Section: Delafossitesmentioning
confidence: 99%