Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses

Postel-Pellerin, J.; Chiquet, P.; Marca, V. Della; Wakrim, T.; Just, G.; Ogier, Jean-Luc

doi:10.1109/smicnd.2014.6966433

Cited by 1 publication

(1 citation statement)

References 9 publications

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“…Moreover, the read voltage is very low at 1 V, and the conductance does not change even if read pulses at a rate of more than 10 5 times are applied. This makes the device more resistant to read disturb than a NAND-type array, and it has retention and endurance advantages compared to a NOR-type array, which uses hot carrier injection [50][51][52][53]. The retention characteristics are analyzed at room temperature after applying ten program pulses with different program voltages.…”

Section: Program Erasementioning

confidence: 99%

3D AND-Type Stacked Array for Neuromorphic Systems

et al. 2020

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NOR/AND flash memory was studied in neuromorphic systems to perform vector-by-matrix multiplication (VMM) by summing the current. Because the size of NOR/AND cells exceeds those of other memristor synaptic devices, we proposed a 3D AND-type stacked array to reduce the cell size. Through a tilted implantation method, the conformal sources and drains of each cell could be formed, with confirmation by a technology computer aided design (TCAD) simulation. In addition, the cell-to-cell variation due to the etch slope could be eliminated by controlling the deposition thickness of the cells. The suggested array can be beneficial in simple program/inhibit schemes given its use of Fowler–Nordheim (FN) tunneling because the drain lines and source lines are parallel. Therefore, the conductance of each synaptic device can be updated at low power level.

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Section: Program Erasementioning

confidence: 99%