Improving CdSeTe Devices With a Back Buffer Layer of Cu<sub>x</sub>AlO<sub>y</sub>

Jamarkattel, Manoj K.; Phillips, Adam B.; Subedi, Kamala Khanal; Bastola, Ebin; Gibbs, Jacob M.; Friedl, Jared D.; Rijal, Suman; Pokhrel, Dipendra; Awni, Rasha A.; Li, Deng‐Bing; Farrell, John; Klie, Robert F.; Mathew, Xavier; Yan, Yanfa; Ellingson, Randy J.; Heben, Michael J.

doi:10.1109/jphotov.2021.3120506

Cited by 9 publications

(10 citation statements)

References 28 publications

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“…Most striking is the low J SC at ∼26.5 mA cm –2 . We note that similar devices prepared on a FTO substrate with higher transparency (Tec 12D) exhibited J SC values of 27.9 mA cm –2 . Turning to the EQE data shown in Figure to determine where J SC is lost, we see that the long wavelength edge goes to ∼900 nm, indicating that the near-front-surface bandgap value of 1.38 eV has been achieved, as expected for optimal CdSe x Te 1– x alloying.…”

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confidence: 54%

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Jamarkattel

Phillips

Subedi

et al. 2022

ACS Appl. Energy Mater.

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There are limited choices for front-surface, electron-selective contacts (emitters) for CdTe solar cells, thus hindering scientific and technical development. Here we investigate the photovoltaic performance of devices fabricated with (In x Ga 1−x ) 2 O 3 (IGO) emitters with varying In-to-Ga ratios prepared by cosputtering. In agreement with predictions, an IGO emitter with a 4.03 eV bandgap (x = 0.36) allowed fabrication of devices with efficiencies of 16%. Increasing the performance to higher values will be enabled by increasing the transmission through the IGO-coated substrate and decreasing the bulk and back interface recombination. These findings demonstrate IGO materials as effective emitters in highefficiency CdTe-based solar cells.

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confidence: 54%

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Jamarkattel

Phillips

Subedi

et al. 2022

ACS Appl. Energy Mater.

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“…To understand the changes occurring near the front interface in more detail, PL spectra were measured through the glass side of the devices before and after LS (Figure a,b). PL spectra for CdSe/CdTe devices have been rarely reported in the literature, and data as a function of the initial CdSe layer thickness have not appeared to date. Before LS, the PL emission was relatively broad and comprised of multiple underlying emission peaks that are difficult to resolve at room temperature.…”

Section: Results and Discussionmentioning

confidence: 99%

“…PL spectra for CdSe/CdTe devices have been rarely reported in the literature, 9 and data as a function of the initial CdSe layer thickness have not appeared to date. Before LS, the PL emission was relatively broad and comprised of multiple underlying emission peaks that are difficult to resolve at room temperature.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The enhanced blue and red responses in CST/CdTe devices as compared to the traditional CdS/CdTe structure are attributed to, respectively, the improved photoactivity in the portion of the CST layer, which is in the zincblende phase ( x < 0.4), and the associated band gap lowering . In addition to enhancing the current, Se alloying also results in better band alignment and reduced recombination rates near the front interface, as well as longer minority carrier lifetimes. ,, …”

Section: Introductionmentioning

confidence: 99%

“…7 In addition to enhancing the current, Se alloying also results in better band alignment and reduced recombination rates near the front interface, as well as longer minority carrier lifetimes. 5,8,9 When a CdSe layer is used at the front of the device to provide a Se source for forming the CST layer, the initial CdSe thickness is critical. Near-complete consumption of the layer during processing is essential to avoid a residual unreacted wurtzite-phase CdSe layer which would be photoinactive and lower the blue response.…”

Section: ■ Introductionmentioning

confidence: 99%

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Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Jamarkattel

Mathew

Phillips

et al. 2022

ACS Appl. Mater. Interfaces

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The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and V oc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSe x Te1–x layer.

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Cracked Film Lithography with CuGaO_x Buffers for Bifacial CdTe Photovoltaics

Muzzillo

Reese

Lee

et al. 2023

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sun front illumination efficiency). The backsheet is then replaced with glass at an added cost of only $0.01/W DC,peak for PERC modules. These simple process changes lead to projections of ≈10% more power output over the lifetime of the module, [3] although 5-33% bifacial power gains have been reported. [4] In parallel with the expansion of bifacial PV, the thin-film PV market has also transformed: CdTe accounted for just 2.5% of total and 70% of thin-film shipped capacity in 2017, but these percentages rose to 3.9% of total and 97% of thin-film in 2021. [5] In contrast to mono-Si, none of the deployed or projected bifacial capacity currently includes CdTe modules. To mitigate climate change, CdTe is preferred because it has much lower embodied energy and CdTe manufacturing is less carbon-intensive than mono-Si PV. [6] Due to the technical complications involved in making CdTe bifacial, it typically only has bifaciality of 10-20%, [7,8] and bifacial adaptations have only been demonstrated on relatively low quality absorbers (up to 14.3% front-illumination-efficiency [9] while monofacial CdTe record efficiency is 22.1% [10] ). Transparent CdTe back contact performance is limited by front illumination fill factor (FF), with values only up to 70.8% [11] in the literature. Ideally, bifacial CdTe would start with a high baseline efficiency and then minimize front-side illumination losses. There are three main challenges in making CdTe bifacial:

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Improving CdSeTe Devices With a Back Buffer Layer of Cu_xAlO_y

Cited by 9 publications

References 28 publications

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Cracked Film Lithography with CuGaO_x Buffers for Bifacial CdTe Photovoltaics

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Improving CdSeTe Devices With a Back Buffer Layer of CuxAlOy

Cited by 9 publications

References 28 publications

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking

Cracked Film Lithography with CuGaOx Buffers for Bifacial CdTe Photovoltaics

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Improving CdSeTe Devices With a Back Buffer Layer of Cu_xAlO_y

Cracked Film Lithography with CuGaO_x Buffers for Bifacial CdTe Photovoltaics