Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Jamarkattel, Manoj K.; Phillips, Adam B.; Subedi, Indra; Abudulimu, Abasi; Bastola, Ebin; Li, Deng‐Bing; Mathew, Xavier; Yan, Yanfa; Ellingson, Randy J.; Podraza, Nikolas J.; Heben, Michael J.

doi:10.1021/acsaem.2c00153

Cited by 16 publications

(5 citation statements)

References 29 publications

(61 reference statements)

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“…Future studies should focus on exploring the correlation of the nonradiative and radiative recombination dynamics with the various front and back buffer layers, absorber dopants, and the deposition methods, applied in CdTe solar cells, and finding the efficient materials and refining the device fabrication processes to address the device performance limiting factors. [1,6,8,12,46] Such endeavors could lead to significant improvements in solar cell performance, ultimately contributing to the advancement of CdTe photovoltaic technology.…”

Section: Experimental Transient Photovoltage and Photocurrent Data Me...mentioning

confidence: 99%

“…[ 3–7 ] Efficient power conversion in solar cells depends on the generation, transport, and collection of charge carriers, processes which are sensitive to the absorber layer's characteristics and to the device interfaces. [ 8–18 ] Charge carrier dynamics within this framework are described by the drift‐diffusion equation, [ 19 ] which for electrons in one dimension is:

$$\frac{\partial n \left(\right. x , t \left.\right)}{\partial t} = D \frac{\left(\partial\right)^{2} n \left(\right.

…”

Section: Introductionmentioning

confidence: 99%

“…[3][4][5][6][7] Efficient power conversion in solar cells depends on the generation, transport, and collection of charge carriers, processes which are sensitive to the absorber layer's characteristics and to the device interfaces. [8][9][10][11][12][13][14][15][16][17][18] Charge carrier dynamics within this framework are described by the drift-diffusion equation, [19] which for electrons in one dimension is:…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Abudulimu,

Carter,

Phillips

et al. 2024

Solar RRL

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Cadmium telluride (CdTe) solar cells represent a commercially successful photovoltaic technology, with an annual production capacity approaching 20 GW. However, improving the open‐circuit voltage (V OC ) remains challenging. This study aims to deepen the understanding of charge carrier recombination in CdTe solar cells and to explore alternative dynamical characterization methods that address the limitations found in conventionally used time‐resolved photoluminescence (TRPL) for CdTe solar cells. We utilized transient photovoltage (TPV) and transient photocurrent (TPC) techniques to investigate charge carrier dynamics under conditions resembling real‐world solar cell operation. Our results reveal that an effective non‐radiative recombination lifetime of 580 ns dominates the charge dynamics at VOC values below 850 mV. Above this threshold, radiative recombination becomes significant, with a radiative recombination coefficient of 1.1×10‐9 cm³ s‐1. Additionally, the stationary charge carrier density at 1 sun was determined to be around 1×1014 cm‐3. By accurately determining both radiative and non‐radiative recombination, this work provides a comprehensive understanding of carrier dynamics in high‐performing CdTe devices and paves the way for improving the VOC and performance of CdTe solar cells.This article is protected by copyright. All rights reserved.

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Section: Experimental Transient Photovoltage and Photocurrent Data Me...mentioning

confidence: 99%

$$\frac{\partial n \left(\right. x , t \left.\right)}{\partial t} = D \frac{\left(\partial\right)^{2} n \left(\right.

…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Abudulimu,

Carter,

Phillips

et al. 2024

Solar RRL

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“…Indium-doped gallium oxide (In x Ga 1−x ) 2 O 3 (IGO) is an emergent wide band gap semiconductor with numerous applications in optoelectronic devices. Using an IGO front emitter layer in CdTe solar cells resulted in an increase in efficiency due to the improved conduction band offset through tuning the In:Ga ratio [1]. Band gap dependent parameters like the open circuit voltage and fill factor were improved by controlling the indium concentration with optimal device performance occurring near 36% indium content.…”

Section: Introductionmentioning

confidence: 99%

Indium defect complexes in (In _x Ga_1−x)₂O₃: a combined experimental and hybrid density functional theory study

Welch,

Talukder,

Martins

et al. 2024

J. Phys. D: Appl. Phys.

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Indium defects in small concentration (InxGa1-x)2O3 were studied using a combination of spectroscopic and magnetic measurements on thin films varying the indium concentration, coupled with hybrid density functional theory simulations using the supercell method. X-ray diffraction spectra along with Tauc plots and density of states plots reveal a decrease (increase) in the electronic band gap (interlayer lattice spacing) due to the inclusion of indium in monoclinic Ga2O3, while room-temperature Hall measurements show an increase in n-type conductivity. Formation energy calculations reveal that the defect complex of substitutional indium at the octahedrally coordinated cation site (InGa) coupled with an indium interstitial (Ini) in the largest Ga-O cavity in the bulk (ia), where the two impurities are a maximal distance away in the unit cell, results in the lowest formation energy across much of the electronic band gap; near the conduction band edge the single InGa defect becomes the lowest energy defect, though. These calculations help shed light on the impurity band enhanced, n-type conductivity increase due to small concentration indium doping in Ga2O3 as seen in the spectroscopic/magnetic measurements.

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“…Cadmium free CIG (Se, S)2 with the conversion efficiency of 23.35% was reported in 2019 by Nakamura et al [16]. The potential alternatives of CdS for the fabrication of Cd free CIGS would be the magnesium zinc oxide (MZO) and indium gallium oxide (IGO), the details of their properties were studied [17,18].…”

Section: Introductionmentioning

confidence: 99%

Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation

Sapkota¹,

Alkhayat²

2023

Preprint

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Copper indium gallium diselenide, Cu(In,Ga)Se2, thin-film of about 1.2 μm has been deposited on Mo coated soda lime glass by thermal co-evaporation of Cu, In, Ga, and Se sources. The thin film CIGS was characterized by energy dispersive spectroscopy (EDS) and identified the elemental composition of Cu, In, Ga and Se in the film. A CIGS device was completed by the successive deposition of multiple layers; SLG/Mo/CIGS/CdS/ZnO/ITO which yielded the efficiency of 11%. External spectroscopic ellipsometry (ex-situ SE) was performed on the completed device and the device analysis was performed. Starting with the parameterized complex dielectric functions of the individual component layers, SE analysis was performed using a step-wise procedure that ranks the fitting parameters according to their ability to reduce the mean square error (MSE) of the fit. The resulting layer thicknesses and dielectric functions were used to simulate the external quantum efficiency (EQE) of the device assuming complete active layer collection. Electronic losses were identified by comparison of simulated EQE with the measured EQE. The ultimate goal of this work is the optimization of narrow band-gap CIGS-related solar cells for the bottom layer in tandem devices.

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Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Cited by 16 publications

References 29 publications

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Indium defect complexes in (In _x Ga_1−x)₂O₃: a combined experimental and hybrid density functional theory study

Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation

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Indium Gallium Oxide Emitters for High-Efficiency CdTe-Based Solar Cells

Cited by 16 publications

References 29 publications

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Indium defect complexes in (In x Ga1−x )2O3: a combined experimental and hybrid density functional theory study

Determination of Electronic Loss in Cu(In,Ga)Se2 Solar Cell by Spectroscopic Ellipsometry Analysis and External Quantum Efficiency Simulation

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Indium defect complexes in (In _x Ga_1−x)₂O₃: a combined experimental and hybrid density functional theory study