Improvements of AlN/GaN MISFET DC and RF characteristics with in situ deposited Si3N4

High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band Applications

“…To our knowledge these are the best RF performance of GaNbased HEMTs on LR Si to date. In addition, our device RF performance is higher than that reported in [10], [11] where sapphire and HR Si were used, respectively.…”

AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric

“…Thus, in order to solve these issues, the insertion of a gate insulator and passivation layer in the access region such as Al 2 O 3 , HfO 2 , Ta 2 O 5 , SiN x is widely adopted. [12][13][14][15][16][17][18][19][20] To avoid Ga-O bond formation which may cause current collapse, 21) nitride-based dielectrics especially AlN are more favored due to the larger bandgap of AlN and smaller lattice mismatch. [22][23][24][25][26][27][28][29][30][31] Recently, plasma-enhanced atomic layer deposition (PEALD) AlN as passivation layer has been proposed.…”