AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric

Abstract

In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) is proposed. This technique features the AlN thin film grown by thermal atomic layer deposition (ALD) at 360 °C without plasma enhancement. A 10 nm AlN thin film serving as gate dielectric and passivation layer in the access region was grown. Compared with the Schottky gate AlN/GaN HEMT (SG-HEMT), the fabricated thermal ALD-grown AlN MIS-HEMT exhibits enhanced Ion/Ioff ratio, reduction of gate leakage by 5 orders of magnitude at a bias of 5 V, and suppressed current collapse degradation.

The Use of Wide Band Gap Semiconductors in the Production of Electronic Devices and its Feasibility Study in Nigeria – Review

“…GaN, similarly, possesses a high relative permittivity, typically around 10 [23]. This characteristic contributes to its effectiveness in high-power applications like power amplifiers and high-frequency circuits [24]. The high permittivity of GaN aids in optimizing the performance of capacitors and other passive components in these applications.…”

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

“…The basic structure of surface passive layer is illustrated in the Figure 6. Many different insulation materials have been explored as the surface passivation layer for AlGaN/GaN HEMTs, including SiO 2 [93,99], Si 3 N 4 [100], ZrO 2 [94,101], HfO 2 [95,96], Ga 2 O 3 [43,102], AlN [103][104][105][106], Sc 2 O 3 [107], TiO 2 [108], ZnO 2 [109], NiO [110], Ta 2 O5 [111], Al 2 O 3 [112][113][114], AlON [43] and so forth. In addition to the surface passivation, dielectric-free passivation technologies have also been proposed and demonstrated, for example, oxygen plasma oxidization [115,116], ozone oxidization [117], chemical oxidization [118], SiH 4 treatment [119] and so forth.…”