High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$X$ &lt;/tex-math&gt;&lt;/inline-formula&gt;-Band Applications

Abstract-Novel MMIC spiral inductors on GaN-on-lowresistivity silicon (LR-Si) substrates (σ < 40 · cm) are demonstrated with enhanced self-resonance frequency ( f SRF ) and Q-factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q-factor enhancement of 57% ( Q = 22 at 24 GHz) and maximum f SRF of 59 GHz was achieved because of the extra 5-μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.Index Terms-Benzocyclobutene (BCB), GaN-based highelectron-mobility transistors (HEMTs), high-Q Inductors, low-resistivity silicon substrates, millimeter wave.

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“…1. Epitaxial layers and growth procedure are detailed in [7]. Optical lithography was used for all levels of device definition.…”

Section: Introductionmentioning

confidence: 99%

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

Eblabla

Wallis

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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“…AlGaN/GaN HEMTs were fabricated using a standard RF process flow on commercial epitaxial stacks from NTT-AT on 6"-diameter high-resistivity (>5 k • cm) Si substrates [11]. The stack consists of 2 μm strain-relief and C:doped (10 19 cm −3 ) GaN buffer, 250 nm of unintentionally doped (uid)-GaN channel layer, 1 nm AlN spacer, 25 nm of Al 0.2 Ga 0.8 N and 2 nm GaN cap.…”

Section: Experimental Methodsmentioning

confidence: 99%

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

Chandrasekar

Uren

Eblabla

et al. 2018

IEEE Electron Device Lett.

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We demonstrate that the highly resistive Si substrate in GaN-on-Si RF HEMTs does not act as an insulator, but instead behaves as a conductive ground plane for static operation and can cause significant back-gateinduced current collapse. Substrate ramp characterization of the buffer shows good agreement with device simulations and indicates that the current collapse is caused by chargeredistribution within the GaN layer. Potential solutions, which alter charge storage and leakage in the epitaxy to counter this effect, are then presented.

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“…In addition, the low value of Csub and high value of Rsub indicates that substrate coupling effect could be neglected in both design structures. This was a result of the proper design geometries where the anode-to-cathode separation (2.415 µm) is less than the buffer thickness (4.65 µm) [10].…”

Section: B Rf Characteristicsmentioning

confidence: 99%

Multi-Channel AlGaN/GaN Lateral Schottky Barrier Diodes on Low-Resistivity Silicon for Sub-THz Integrated Circuits Applications

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Alathbah

et al. 2019

IEEE Electron Device Lett.

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High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band Applications

Cited by 27 publications

References 13 publications

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates

Multi-Channel AlGaN/GaN Lateral Schottky Barrier Diodes on Low-Resistivity Silicon for Sub-THz Integrated Circuits Applications

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