Improvement of Voltage Linearity in High-<tex>$kappa$</tex>MIM Capacitors Using<tex>$hbox HfO_2hbox --hbox SiO_2$</tex>Stacked Dielectric

Scalable high-k metal-insulator-metal capacitors with low leakage, high breakdown fields and improved voltage linearity

“…Linear scaling from 350 to 2 nm of the MISO MIMCAPS is a particularly unique achievement for a high-k dielectric system, and linear fits give an extracted MISO k-value estimate of 17, which concurs well with the MIMCAPS' individual k-value extractions using (1) (k 14 -18). Low leakage current densities at estimated operating voltages are achieved -along with high electrical breakdown fields, providing uniform results across the thickness range, showing scalability, temperature stability, and considerably improved combined properties compared to other high-k dielectric MIMCAPS when we consider a k-value of 17 is achieved compared to 10 by the best alternative non-scalable laminate methods [7]. Such combined properties, along with temperature stability, a linear QCC, and a high Q-value (not shown), are desirable for a wide range of analogue-based applications [8].…”

“…Poor repeatability and reliability are commonplace, and there is generally significant change in the electrical properties with changing temperature and operating frequency. Among these non-ideal properties is an empirical inverse relation between k-value and E BD , as well as an empirical non-constant E BD with changing high-k thickness [7].Background methods: We use atomic layer deposition (ALD) techniques to deposit a particular metal-in-silicon-oxide material system (known for the purpose of this Letter as 'MISO' [8]) based on an M x Si 12x O 2 (M ¼ Hf and/or Zr) composition with a particular and reproducible atomic structure that gives the optimum electrical properties for the targeted applications. A bonus is that we believe the systems to be radiation-hard, and therefore particularly suited to circuitry exposed to increased levels of radiation in terrestrial and non-terrestrial applications [8].…”

“…Poor repeatability and reliability are commonplace, and there is generally significant change in the electrical properties with changing temperature and operating frequency. Among these non-ideal properties is an empirical inverse relation between k-value and E BD , as well as an empirical non-constant E BD with changing high-k thickness [7].…”

High-Performance MIM Capacitors With Nanomodulated Electrode Surface

“…So far, no single dielectric material has been able to meet all of the above requirements. The solution most commonly used for reducing both the leakage current and the α coefficient is the stacking of a high-k dielectric of positive α with a dielectric of negative α, such as SiO 2 [2]- [4] or, more recently, ZrTiO x [5]. One of the main problems with this approach is that, in general, the positive value of α for the high-k material is very large and increases as a quadratic function of the capacitance density [5], [6].…”

“…One of the main problems with this approach is that, in general, the positive value of α for the high-k material is very large and increases as a quadratic function of the capacitance density [5], [6]. It is, therefore, difficult to cancel it out (using for example a dielectric with negative α such as SiO 2 ), while maintaining an overall high capacitance density [2], [3]. The challenge is, therefore, to find the adequate single-layer high-k dielectric with a reduced α coefficient to be cancelled out more efficiently and adequate other characteristics.…”