Improvement of Thickness Uniformity of Silicon on Insulator Layer by Numerically Controlled Sacrificial Oxidation Using Atmospheric-Pressure Plasma with Electrode Array System

Abstract

The coliective fluctuation spectrum of the electron density in a plasma is saiculated by a new method which has been deveioped in an earlier paper (THEIMER. HICKS and BEHL. 1975). The method is applied to partiall) ionized plasmas with coilisior, frequency v e ( c ) = GV proporrionai to the speed of the e!ectrons. The general formulas for the fluctuation spectrnrn are numerically eva!uated and show that the sharp resonance peak ne2r thi. electron plasma f;eqar,cy is very sensitive to the speed dependence of v,: the peak is oniy moderately broadened ii ?iiZ coilision parameter ye (see equation

Numerically controlled atmospheric-pressure plasma sacrificial oxidation using electrode arrays for improving silicon-on-insulator layer uniformity

“…We used an atmospheric-pressure plasma generated system with an electrode array as the experimental setup. 27) Figure 1 shows the entire setup, including a high-frequency power supply, a discharge chamber, an electrode control system, and a cooling system. When a high-frequency voltage is applied to the electrodes, they generate a dielectric barrier discharge when the distance between the electrode and the glass plate in the default position is about 0 mm.…”

“…The SOI layer thickness variability of commercial SOI wafers is currently several nanometers, and the necessary electrode size has been estimated to be less than 14 mm when the target PV value is less than 1.0 nm, as determined in a recent study. 27) As a target of basic experiment, p-type (100) silicon wafers with a resistivity range of 14-25 ³0cm were used. Before oxidation, each wafer was dipped in 0.5% HF solution for 1 min to remove the initial surface oxide layer and rinsed with ultrapure water for 10 min.…”

“…SOI wafer area. 27,28) In their previous study, they considered the necessary size of electrodes for improving of the SOI layer thickness variation of commercial SOI wafers and showed that this apparatus generated plasma with all electrodes and oxidized the entire electrode covered area. However, the outcome of using an electrode array in the NC process has not been reported.…”