Hard X-rays have exceptional properties that are useful in the chemical, elemental and structure analysis of matter. Although single-nanometre resolutions in various hard-X-ray analytical methods are theoretically possible with a focused hard-X-ray beam, fabrication of the focusing optics remains the main hurdle. Aberrations owing to imperfections in the optical system degrade the quality of the focused beam 1 . Here, we describe an in situ wavefront-correction approach to overcome this and demonstrate an X-ray beam focused in one direction to a width of 7 nm at 20 keV. We achieved focal spot improvement of the X-ray nanobeam produced by a laterally graded multilayer mirror 2 . A grazing-incidence deformable mirror 3 was used to restore the wavefront shape. Using this system, ideal focusing conditions are achievable even if hard-X-ray focusing elements do not achieve sufficient performance. It is believed that this will ultimately lead to single-nanometre spatial resolution in X-ray analytical methods.Synchrotron radiation facilities produce high-quality light with wavelengths ranging from the infrared to hard-X-ray regions. The use of hard X-rays with energies higher than several kiloelectronvolts in conjunction with analysis methods such as X-ray diffraction, X-ray fluorescence, X-ray absorption and X-ray photoelectron spectroscopy offers unique advantages for the investigation of the structure, elemental distribution and chemical bonding state of advanced materials and biological samples. In these analytical methods, the resolution, signal strength and contrast must be as high as possible. In this regard, the development of a hard-X-ray focusing device is important for meeting these demands. To focus light, it is necessary to take advantage of its interactions with matter, such as diffraction, reflection and refraction. There are a variety of hard-X-ray focusing optical systems such as mirrors 4 , zone plates 5 , refractive lenses 6 and multilayer Laue lenses 7 . The minimum achievable spot size has been theoretically investigated by many researchers 8-10 , and it has been concluded that sizes below 10 nm are feasible with kiloelectronvolt X-rays. That is, hard-X-ray analytical techniques have the potential for single-nanometre spatial resolution.However, in such discussions, the imperfections of the focusing elements have not been entirely considered. Rayleigh's quarterwavelength rule 1 states that if the wavefront aberration exceeds a quarter of a wavelength, the quality of the retinal image will be significantly impaired. This rule is also applicable to simple light-focusing optical systems. The wavefront error of the focused beam distorts the shape of the intensity profile on the focal plane and spreads the beam. The short wavelength of X-rays demands unprecedented accuracy in the manufacturing of the LETTERS 1.43 nm (r.m.s.) over a 500-nm-square area, which was directly confirmed by atomic force microscopy. A phase shift occurred at the boundary between the X-rays propagating inside and outside the phase ...

Nanofocused x rays are indispensable because they can provide high spatial resolution and high sensitivity for x-ray nanoscopy/spectroscopy. A focusing system using total reflection mirrors is one of the most promising methods for producing nanofocused x rays due to its high efficiency and energy-tunable focusing. The authors have developed a fabrication system for hard x-ray mirrors by developing elastic emission machining, microstitching interferometry, and relative angle determinable stitching interferometry. By using an ultraprecisely figured mirror, they realized hard x-ray line focusing with a beam width of 25nm at 15keV. The focusing test was performed at the 1-km-long beamline of SPring-8.

We have constructed an extremely precise optical system for hard-x-ray nanofocusing in a synchrotron radiation beamline. Precision multilayer mirrors were fabricated, tested, and employed as Kirkpatrick-Baez mirrors with a novel phase error compensator. In the phase compensator, an at-wavelength wavefront error sensing method based on x-ray interferometry and an in situ phase compensator mirror, which adaptively deforms with nanometer precision, were developed to satisfy the Rayleigh criterion to achieve diffraction-limited focusing in a single-nanometer range. The performance of the optics was tested at BL29XUL of SPring-8 and was confirmed to realize a spot size of approximately 7 nm.

Relative angle determinable stitching interferometry for hard x-ray reflective optics Rev. Sci. Instrum. 76, 045102 (2005); 10.1063/1.1868472 X-ray wavefront analysis and optics characterization with a grating interferometer A new stitching interferometry based on a microscopic interferometer having peak-to-valley height accuracy of subnanometer order and lateral resolution higher than 20 m was developed to measure surface figures of large-size x-ray mirror optics. Cumulative errors of the stitching angle in a long spatial wavelength range were effectively reduced to be 1ϫ10 Ϫ7 rad levels using another interferometer having a large cross section in the optical cavity. Some optical performances of ultraprecise x-ray mirrors, such as submicrofocused beam profile, were wave optically calculated from the measured surface figure profiles and observed at the 1 km long beamline ͑BL29XUL͒ of SPring-8. Observed and wave optically calculated results were in good agreement with a high degree of accuracy.

Conventional machining processes, such as turning, grinding, or lapping are still applied for many materials including functional ones. But those processes are accompanied with the formation of a deformed layer, so that machined surfaces cannot perform their original functions. In order to avoid such points, plasma chemical vaporization machining (CVM) has been developed. Plasma CVM is a chemical machining method using neutral radicals, which are generated by the atmospheric pressure plasma. By using a rotary electrode for generation of plasma, a high density of neutral radicals was formed, and we succeeded in obtaining high removal rate of several microns to several hundred microns per minute for various functional materials such as fused silica, single crystal silicon, molybdenum, tungsten, silicon carbide, and diamond. Especially, a high removal rate equal to lapping in the mechanical machining of fused silica and silicon was realized. 1.4 nm (p–v) was obtained as a surface roughness in the case of machining a silicon wafer. The defect density of a silicon wafer surface polished by various machining method was evaluated by the surface photo voltage spectroscopy. As a result, the defect density of the surface machined by plasma CVM was under 1/100 in comparison with the surface machined by mechanical polishing and argon ion sputtering, and very low defect density which was equivalent to the chemical etched surface was realized. A numerically controlled CVM machine for x-ray mirror fabrication is detailed in the accompanying article in this issue.

a b s t r a c tElectro-chemical mechanical polishing (ECMP), which combines anodic oxidation and soft abrasive polishing, was applied to single-crystal SiC. Ceria (CeO 2 ) slurry was used as an electrolyte for anodic oxidation as well as a polishing medium to remove the oxide layer. As a result of anodic oxidation, the surface hardness decreased from 34.5 GPa to 1.9 GPa, which made it possible to polish the oxidized SiC surface using a very soft abrasive such as CeO 2 . It was found that the material removal rate (MRR) of ECMP for a diamond-abrasive-polished surface was 3.62 μm/h. ECMP using CeO 2 slurry was conducted for 30 min on a diamond-abrasive-polished surface. All the scratches were completely removed and a smooth surface with a root mean square (RMS) roughness of 0.23 nm was obtained.

We developed a high-spatial-resolution scanning x-ray fluorescence microscope ͑SXFM͒ using Kirkpatrick-Baez mirrors. As a result of two-dimensional focusing tests at BL29XUL of SPring-8, the full width at half maximum of the focused beam was achieved to be 50ϫ 30 nm 2 ͑V ϫ H͒ under the best focusing conditions. The measured beam profiles were in good agreement with simulated results. Moreover, beam size was controllable within the wide range of 30-1400 nm by changing the virtual source size, although photon flux and size were in a trade-off relationship. To demonstrate SXFM performance, a fine test chart fabricated using focused ion beam system was observed to determine the best spatial resolution. The element distribution inside a logo mark of SPring-8 in the test chart, which has a minimum linewidth of approximately 50-60 nm, was visualized with a spatial resolution better than 30 nm using the smallest focused x-ray beam.

Development of mirror manipulator for hard-x-ray nanofocusing at sub-50 -nm level Rev. Sci. Instrum. 77, 093107 (2006); Metrology plays an important role in surface figuring with subnanometer accuracy. We have developed relative angle determinable stitching interferometry for the surface figuring of elliptical mirrors, in order to realize hard x-ray nanofocusing. In a stitching system, stitching angles are determined not by the general method using a common area between neighboring shots, but by the new method using the mirror's tilt angles measured at times when profile data are acquired. The high measurement accuracy of approximately 4 nm ͑peak-to-valley͒ was achieved in the measurement of a cylindrical surface having the same curvature as the elliptically designed shape to enable hard x-ray nanofocusing.