We report on Mopra observations of the young massive star cluster RSGC 1, adjoined to and possibly associated with the gamma-ray source HESS J1837−069. We measure the CO (J = 1–0) distribution around the cluster and gamma-ray source, and find that the cluster is slightly higher than the velocity ranges associated with the Crux–Scutum arm. We reveal that the cluster is associated with much less molecular gas compared with other young massive clusters in the Galaxy, Westerlund 1 (Wd 1) and 2 (Wd 2), which also radiate gamma-rays. We find no other structures that would otherwise indicate the action of supernova remnants, and due to the lack of material which may form gamma-rays by hadronic interaction, we conclude that the gamma-rays detected from HESS J1837−069 are not created through proton–proton interactions, and may more plausibly originate from the pulsar that was recently found near RSGC 1.
PolariS (Polarimetry Satellite) is a Japanese small satellite mission dedicated to polarimetry of X-ray and γ-ray sources. The primary aim of the mission is to perform hard X-ray (10-80 keV) polarimetry of sources brighter than 10 mCrab. For this purpose, PolariS employs three hard X-ray telescopes and scattering type imaging polarimeters. PolariS will measure the X-ray polarization for tens of sources including extragalactic ones mostly for the first time. The second purpose of the mission is γ-ray polarimetry of transient sources, such as γ-ray bursts (GRBs). Wide field polarimeters based on similar concept as that used in the IKAROS/GAP but with higher sensitivity will be used, and polarization measurement of 10 GRBs per year is expected.
The coliective fluctuation spectrum of the electron density in a plasma is saiculated by a new method which has been deveioped in an earlier paper (THEIMER. HICKS and BEHL. 1975). The method is applied to partiall) ionized plasmas with coilisior, frequency v e ( c ) = GV proporrionai to the speed of the e!ectrons. The general formulas for the fluctuation spectrnrn are numerically eva!uated and show that the sharp resonance peak ne2r thi. electron plasma f;eqar,cy is very sensitive to the speed dependence of v,: the peak is oniy moderately broadened ii ?iiZ coilision parameter ye (see equation
Silicon-on-insulator (SOI) wafers are important semiconductor substrates in high-performance devices. In accordance with device miniaturization requirements, ultrathin and highly uniform top silicon layers (SOI layers) are required. A novel method involving numerically controlled (NC) atmospheric-pressure plasma sacrificial oxidation using an electrode array system was developed for the effective fabrication of an ultrathin SOI layer with extremely high uniformity. Spatial resolution and oxidation properties are the key factors controlling ultraprecision machining. The controllability of plasma oxidation and the oxidation properties of the resulting experimental electrode array system were examined. The results demonstrated that the method improved the thickness uniformity of the SOI layer over one-sixth of the area of an 8-in. wafer area.
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