Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

“…It was suggested that the threshold voltage control has become one of the major concerns for the actual application of high-k gate dielectrics in CMOS devices [14][15][16][17][18]. The difficulty in threshold voltage control is due to the high fixed charge density in the high-k dielectric and the Fermi level pinning effect at the high-k/ metal interface [14].…”