Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

Chang, Wen-Yuan; Cheng, Kai-Jung; Tsai, Jui-Ming; Chen, Hung‐Jen; Chen, Frederick; Tsai, Ming-Jinn; Wu, Tai–Bor

doi:10.1063/1.3193656

Cited by 137 publications

(36 citation statements)

References 16 publications

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“…However, resistive switching is unstable, which may cause operating issues [9,10]. Several methods such as doping [11], process optimization [12], interface control [13], and embedding nano-particles [14-16] have been adopted to improve the switching dispersion in various switching behaviors. All studies used inactive materials for their embedded nano-particles when examining their effect on switching behavior [14,17].…”

Section: Introductionmentioning

confidence: 99%

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching

et al. 2013

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Cu nano-particles (Cu-NPs) were embedded into the SiO2 layer of a Cu/SiO2/Pt structure to examine their influence on resistive switching characteristics. The device showed a reversible resistive switching behavior, which was due to the formation and rupture of a Cu-conducting filament with an electrochemical reaction. The Cu-NPs enhanced the local electric field within the SiO2 layer, which caused a decrease in the forming voltage. During successive switching processes, the Cu-NP was partially dissolved, which changed its shape. Therefore, the switching voltages were not reduced. Moreover, the Cu-NPs caused a non-uniform Cu concentration within the SiO2 layer; thus, the Cu-conducting filament should be formed in a high Cu concentration region, which improves switching dispersion. The Cu-NPs within the SiO2 layer stabilize the resistive switching, resulting in a larger switching window and better endurance characteristics.

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Section: Introductionmentioning

confidence: 99%

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching

et al. 2013

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“…To date, various methods including doping [9], interface engineering [10] and nanoparticle incorporation [11,12] were used to improve the performance of RRAM devices. The effects of Au and Pt nanoparticles embedded in ZrO 2 and TiO 2 oxide films have also been studied [12,13].…”

Section: Introductionmentioning

confidence: 99%

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

Younis

Chu

2013

Nanoscale Res Lett

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Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High ROFF/RON ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.

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“…To solve this problem, many optimization methods were already proposed, such as the impurity doping, 11 process annealing, 18 active electrode, 19 and nanocrystal inducing. [20][21][22] By reducing the active energy of ion migration or localizing the driving electric field, the switching characteristics of these devices were significantly improved.…”

mentioning

confidence: 99%

In-situ observation of self-regulated switching behavior in WO3-x based resistive switching devices

Hong¹,

Wang²,

Chen³

et al. 2014

Applied Physics Letters

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The transmittance of tungsten oxides can be adjusted by oxygen vacancy (Vo) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO3-x planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO3-x device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high Vos mobility was demonstrated in the WO3-x film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of Vos was the physical origin for such unique switching characteristics.

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Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals

Cited by 137 publications

References 16 publications

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching

Influence of embedding Cu nano-particles into a Cu/SiO2/Pt structure on its resistive switching

Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

In-situ observation of self-regulated switching behavior in WO3-x based resistive switching devices

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