In-situ observation of self-regulated switching behavior in WO3-x based resistive switching devices

Abstract

The transmittance of tungsten oxides can be adjusted by oxygen vacancy (Vo) concentration due to its electrochromic property. Here, we report an in-situ observation of resistive switching phenomenon in the oxygen-deficient WO3-x planar devices. Besides directly identifying the formation/rupture of dark-colored conductive filaments in oxide layer, the stripe-like WO3-x device demonstrated self-regulated switching behavior during the endurance testing, resulting in highly consistent switching parameters after a stabilizing process. For very high Vos mobility was demonstrated in the WO3-x film by the pulse experiment, we suggested that the electric-field-induced homogeneous migration of Vos was the physical origin for such unique switching characteristics.

Studies on energy storage properties of BFO/WO3 bilayer thin film capacitor

“…In the similar manner, (100), (120), ( 220), (300), (002), (400) and (401) peaks correspond to the WO 3 cubic perovskite structure in all films. [27][28][29][30][31][32][33] All deposited thin films possessed a nontextured polycrystalline structure with each film exhibiting similar XRD patterns, so there was no significant change in the intensity of peaks as a result of the variation in GLAD angle. However, the crystallite size (grain) increased with increasing GLAD angle from 65 to 70 and as the GLAD angle was increased further to 75 and 80 , the grain size decreased.…”

Review on the Properties of Boron-Doped Diamond and One-Dimensional-Metal-Oxide Based P-N Heterojunction

“…The [0001] oriented 1D ZnO NRs are normally aligned and epitaxial grown perpendicular to the diamond (111) plane. The epitaxial growth relation between the ZnO (0001) and diamond (111) is suggested in compliance with (0001) [1120]ZnO//(111) [110] diamond or (0001)[1010]ZnO//(111) [110]diamond (Figure 9a), and the epitaxial growth relation between the (0001) ZnO and (100) diamond is primarily of (0001)[0001]ZnO//(101) [101] diamond (Figure 9b) [23]. An in-depth study of 1D ZnO/diamond system will not only contribute to understanding the physical mechanism for epitaxial growth but also to extending the area of ZnO/diamond applications in optoelectronics devices.…”

“…WO 3 is considered as another candidate material for applications in electronics [ 7 , 107 ]. 1D WO 3 nanostructures (such as NRs, NWs and nanoneedles) have been used in photocatalytic applications [ 108 , 109 ], sensor switching devices [ 110 ], gas sensors [ 111 , 112 ] and UV photodetectors [ 2 ]. Because of the excellent performance of 1D WO 3 and BDD, it is worth combining them in 1D n-WO 3 /p-BDD heterojunction to provide new applications in electronics, especially at higher temperatures.…”

Electron-Ion Mixed Conduction of Amorphous WO_3-<i>x</i> Thin Film Probed by Soft-X-Ray Spectroscopy

“…Among many candidates, the resistive random access memory (ReRAM), which is based on resistive switching effect of dielectric material, is expected as one of the most promising devices with high speed and low power consumption [1,2]. The switching effect has been observed in several dielectric oxide materials such as NiO [3,4], TiO2 [5][6][7], Ta2O5 [8,9], and WO3-x [10].…”