In this paper, nanostructured tungsten oxide (WO3) thin films are deposited using the RF-magnetron sputtering technique in Glancing Angle (GLAD) arrangement. Variation in the structural, morphological, optical, and resistive switching (RS) characteristics of nanostructured WO3 film is investigated as a function of GLAD angle (60°–80°). Electrical studies on nanostructured WO3 films deposited at room temperature are found to exhibit enhanced bipolar resistive-switching properties in metal–insulator–metal pattern [Au/WO3/ITO]. The RON/ROFF ratio between high and low resistance states was noted to be about 190 besides a minimum set voltage of ∼2.22 V in the case of the WO3 thin film deposited at the 70° glancing angle. A detailed current transport mechanism analysis indicates the existence of ohmic-behavior and trap-assisted space charge limited conduction as the governing mechanisms at the state of low and high applied bias, respectively. Good data-retention characteristics coupled with reproducible and fast RS capabilities obtained with Au/WO3/ITO device structure promise scope of rapid development in future RS-based novel memory device applications.

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Present work reports the growth of BFO/WO 3 bilayer thin film structures over Silicon, corning and ITO coated glass substrates. BFO layer in BFO/WO 3 bilayer structure was deposited using Pulsed Laser deposition (PLD) technique at optimized laser energy (200 mJ) while WO 3 nanostructured layer was deposited using rf-magnetron sputtering technique at varying glancing angle from 65 to 80 . For the realization of MBM (metal-bilayer-metal) device, top Gold (Au) electrodes have been deposited using thermal evaporation technique. The BFO/WO 3 bilayer structure fabricated at 70 glancing angle exhibited the saturation (P s ) and remnant (P r ) polarization as 45.45 μC/cm 2 and 21.52 μC/cm 2 respectively, which are appreciably higher than the earlier reports for pure BFO thin films. Enhanced energy storage characteristics were obtained in Au/BFO/WO 3 /ITO structure fabricated at 70 glancing angle with chargedischarge efficiency (63%) and enlarged recoverable energy density (467 mJ/cm 3 ). Achieved results indicate the utilization of fabricated Au/BFO/ WO 3 /ITO structures towards high energy storage applications.