We have fabricated TiO2 thin films with embedded Pt nanocrystals (Pt-NCs) and investigated the resistive switching characteristics for nonvolatile memory application. Reversible and steady bistable resistance switching behavior was observed for the Pt/TiO2/Pt capacitors with Pt-NCs embedded in the TiO2 films. Moreover, an improvement in the stability of resistance switching and retention properties was also achieved from the embedding of uniform and fine Pt-NCs.
The bipolar resistive switching characteristics of a Pt/ZnO/Pt structure were investigated in this study. It is found that low resistance state can be only formed at a positive bias while high resistance state can be only formed at a negative bias with the bipolar switch characteristics. The conduction mechanism at different resistance states also were discussed. The resistive switch mechanism may be relate to the generation and oxidation of filaments and the switch polarity is likely resulted from the geometric effect due to the asymmetrical structure of electrodes, resulting in the flux of defects near the edge of top electrode caused by local enhancement of electric field.
The latest generation of CMOS-MEMS accelerometer has measured mechanical Brownian noise-limited resolution of 45 pg/ f i z at 1 atm. A modified pre-amplifier design with subthreshold transistor dc biasing is robust against leakage paths to positive and negative supplies and has an input referred noise of 14.6 nV/& at the 2 MHz modulation frequency. The accelerometer proof mass is purposely sized, to have equivalent mechanical Brownian noise. An array approach to improve the noise floor further is proposed and fabricated.
FinFET devices are considered to be the potential ones replacing the traditional CMOSFET in the sub-nanometer regime. The 3-D structural fins depress the leakage current from being outrageously out of control as the sizes of devices get substantially shrunk. In this study, the fin-thickness effects on the electrical performances are mainly observed. Three different kinds of thickness (namely, 0.110 m, 0.115 m, and 0.120 m) with the same channel length (0.1 m) are put into comparison. The phosphorus implants of the same dose with different energies for N-well threshold voltage adjustment are also taken into account. The threshold voltage, swing, and the mobility are to be determined.
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